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- Title
Epitaxial CeO<sub>2</sub> thin films for a mechanism study of resistive random access memory (ReRAM)
- Authors
Yoshitake, Michiko; Vaclavu, Michal; Chundak, Mykhailo; Matolin, Vladimir; Chikyow, Toyohiro
- Abstract
A thin epitaxial CeO 2 film was grown on a Cu(111) single crystal in order to investigate the mechanism of resistive memory/switching devices with an ultimately thin high- k dielectric film. A small amount of Pt was deposited on the CeO 2 film and the Pt/CeO 2/Cu structure was characterized by conductive atomic force microscopy and X-ray photoelectron spectroscopy. It was found that the grown epitaxial CeO 2 film was fully oxidized, i.e., the valence of Ce atoms in the film was completely Ce 4+. However, after the deposition of a small amount of Pt, it was revealed that Ce atoms were partially reduced to Ce 3+ in full thickness of the film. The Pt/CeO 2/Cu structure did not show switching behavior in resistance. The observed reduction of CeO 2 film is considered to be responsible to the non-switching behavior. The thermodynamics of the reduction of the CeO 2 film and the kinetics of oxygen diffusion in the reduced CeO 2 film are discussed.
- Subjects
CERIUM oxides; THIN films; NONVOLATILE random-access memory; CRYSTAL growth; SWITCHING circuits; DIELECTRIC films; COPPER compounds
- Publication
Journal of Solid State Electrochemistry, 2013, Vol 17, Issue 12, p3137
- ISSN
1432-8488
- Publication type
Article
- DOI
10.1007/s10008-013-2200-6