We found a match
Your institution may have rights to this item. Sign in to continue.
- Title
The Shubnikov-de Haas effect and thermoelectric properties of Tl-doped SbTe and BiSe.
- Authors
Kulbachinskii, V.; Kudryashov, A.; Kytin, V.
- Abstract
The influence of doping with Tl on the Shubnikov-de Haas effect at T = 4.2 K in magnetic fields up to 38 T in p-SbTlTe ( x = 0, 0.005, 0.015, and 0.05) and n-BiTlSe ( x = 0, 0.01, 0.02, 0.04, and 0.06) single crystals is investigated. Extreme cross-sections of the Fermi surface in both materials decrease upon doping with Tl: the hole concentration decreases in SbTlTe due to the donor effect of Tl and the electron concentration in n-BiTlSe decreases due to the acceptor effect of Tl. The temperature dependences of the Seebeck coefficient, electrical conductivity, thermal conductivity, and dimensionless thermoelectric figure of merit in a temperature range of 77-300 K are measured. The thermal conductivity and electrical conductivity decrease upon doping with Tl both in p-SbTlTe and in n-BiTlSe. The Seebeck coefficient increases in all compositions upon an increase in doping over the entire measured temperature range. The thermoelectric figure of merit increases upon doping with Tl.
- Subjects
SHUBNIKOV-de Haas effect; THERMOELECTRIC effects; DOPING agents (Chemistry); BISMUTH selenide; SINGLE crystals; FERMI surfaces
- Publication
Semiconductors, 2015, Vol 49, Issue 6, p767
- ISSN
1063-7826
- Publication type
Article
- DOI
10.1134/S1063782615060135