Found: 26
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Instability of current and N-shaped current-voltage characteristic in a silicon p-i-n diode subjected to a magnetic field.
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- Semiconductors, 2007, v. 41, n. 8, p. 965, doi. 10.1134/S1063782607080192
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- Article
Leonid Stepanovich Smirnov (dedicated to his 75th birthday).
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- Semiconductors, 2007, v. 41, n. 8, p. 1002, doi. 10.1134/S106378260708026X
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- Article
Cathodoluminescence studies of C<sub>60</sub> fullerene-based films and nanostructures.
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- Semiconductors, 2007, v. 41, n. 8, p. 879, doi. 10.1134/S1063782607080027
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Method for extracting of EXAFS oscillation function based on the variation principle.
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- Semiconductors, 2007, v. 41, n. 8, p. 882, doi. 10.1134/S1063782607080039
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Temperature dependence of the band structure of ZnS, ZnSe, ZnTe, and CdTe wurtzite-type semiconductor compounds.
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- Semiconductors, 2007, v. 41, n. 8, p. 886, doi. 10.1134/S1063782607080040
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Correction of the method of current-voltage characteristics for determination of density of surface states in the system of germanium-rare-earth element fluoride.
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- Semiconductors, 2007, v. 41, n. 8, p. 900, doi. 10.1134/S1063782607080064
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- Article
Deformation potential constants of deep impurity centers in semiconductors with anisotropic valence band.
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- Semiconductors, 2007, v. 41, n. 8, p. 897, doi. 10.1134/S1063782607080052
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Photoluminescence and composition of amorphous As<sub>2</sub>Se<sub>3</sub> films modified with Er( thd)<sub>3</sub> complex compound.
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- Semiconductors, 2007, v. 41, n. 8, p. 914, doi. 10.1134/S106378260708009X
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Preparation of ZnO:N films by radical beam gettering epitaxy.
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- Semiconductors, 2007, v. 41, n. 8, p. 904, doi. 10.1134/S1063782607080076
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Enhancement of the Raman scattering in grooved silicon structures.
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- Semiconductors, 2007, v. 41, n. 8, p. 970, doi. 10.1134/S1063782607080209
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- Article
Effect of low-temperature annealing on characteristics of SiC detectors with radiation-induced defects.
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- Semiconductors, 2007, v. 41, n. 8, p. 979, doi. 10.1134/S1063782607080222
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Electrical passivation of the silicon surface by organic monolayers of 1-octadecene.
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- Semiconductors, 2007, v. 41, n. 8, p. 991, doi. 10.1134/S1063782607080246
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Saturation of light-current characteristics of high-power laser diodes (λ = 1.0–1.8 μm) under pulse operation.
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- Semiconductors, 2007, v. 41, n. 8, p. 984, doi. 10.1134/S1063782607080234
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- Article
Picosecond kinetics of photoexcited carriers in gallium arsenide containing aluminum nanoclusters.
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- Semiconductors, 2007, v. 41, n. 8, p. 909, doi. 10.1134/S1063782607080088
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Current-voltage characteristics of isotype SiC-SiC junctions fabricated by direct wafer bonding.
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- Semiconductors, 2007, v. 41, n. 8, p. 921, doi. 10.1134/S1063782607080106
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Determination of the composition and strains in Ge<sub>x</sub>Si<sub>1− x </sub>-based nanostructures from Raman spectroscopy data with consideration of the contribution of the heterointerface.
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- Semiconductors, 2007, v. 41, n. 8, p. 930, doi. 10.1134/S106378260708012X
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Simulation of the fluctuations of energy and charge deposited during e-beam exposure.
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- Semiconductors, 2007, v. 41, n. 8, p. 877, doi. 10.1134/S1063782607080015
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- Article
Effect of atmospheric-air pressure on charge transport in structures with oxidized porous silicon.
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- Semiconductors, 2007, v. 41, n. 8, p. 925, doi. 10.1134/S1063782607080118
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Lateral photoconductivity of Ge/Si heterostructures with Ge quantum dots.
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- Semiconductors, 2007, v. 41, n. 8, p. 935, doi. 10.1134/S1063782607080131
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Formation and optical properties of CuInTe<sub>2</sub> nanoparticles in silicate matrices.
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- Semiconductors, 2007, v. 41, n. 8, p. 939, doi. 10.1134/S1063782607080143
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Formation of nanoparticles on the silicon surface under the effect of femtosecond laser pulses.
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- Semiconductors, 2007, v. 41, n. 8, p. 998, doi. 10.1134/S1063782607080258
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Allotropic composition of amorphous carbon.
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- Semiconductors, 2007, v. 41, n. 8, p. 946, doi. 10.1134/S1063782607080155
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Modification of the properties of porous silicon on adsorption of iodine molecules.
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- Semiconductors, 2007, v. 41, n. 8, p. 953, doi. 10.1134/S1063782607080167
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A decrease in the density of trapping centers in silicon oxide as a result of radiation-thermal treatment.
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- Semiconductors, 2007, v. 41, n. 8, p. 958, doi. 10.1134/S1063782607080179
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The effect of NO<sub>2</sub> adsorption on optical and electrical properties of porous silicon layers.
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- Semiconductors, 2007, v. 41, n. 8, p. 962, doi. 10.1134/S1063782607080180
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- Article
Cadmium-free thin-film Cu(In,Ga)Se<sub>2</sub>/(In<sub>2</sub>S<sub>3</sub>) heterophotoelements: Fabrication and properties.
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- Semiconductors, 2007, v. 41, n. 8, p. 973, doi. 10.1134/S1063782607080210
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