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- Title
Design and Technology of Vertical-Cavity Surface-Emitting Lasers with Nonconducting Epitaxial Mirrors.
- Authors
Maleev, N.A.; Kovsh, A.P.; Zhukov, A.E.; Vasil'ev, A.P.; Mikhrin, S.S.; Kuz'menkov, A.G.; Bedarev, D.A.; Zadiranov, Yu. M.; Kulagina, M.M.; Shernyakov, Yu. M.; Shulenkov, A.S.; Bykovskii, V.A.; Solov'ev, Yu. M.; Moller, C.; Ledentsov, N.N.; Ustinov, V.M.
- Abstract
Design and technology problems in the fabrication of vertical-cavity surface-emitting lasers (VCSELs) equipped with nonconducting distributed Bragg reflectors (DBRs) and fabricated using molecular-beam epitaxy are considered. VCSELs with an active region were formed on the basis of InGaAs quantum wells and incorporated an AlGaAs/GaAs bottom DBR and an oxidized AlGaO/GaAs top DBR; the diameter of the oxidized aperture was equal to 7–12μm. The devices exhibit a continuous-wave lasing at room temperature with threshold currents of 0.5–1.5 mA, a differential efficiency as high as 0.5 mW/mA, and a highest output power of 3 mW. © 2003 MAIK “Nauka / Interperiodica”.
- Subjects
SEMICONDUCTOR lasers; LIGHTING reflectors; MOLECULAR beam epitaxy
- Publication
Semiconductors, 2003, Vol 37, Issue 10, p1234
- ISSN
1063-7826
- Publication type
Article
- DOI
10.1134/1.1619524