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- Title
Structure and properties of InGaAs layers grown by low-temperature molecular-beam epitaxy.
- Authors
Vilisova, M. D.; Ivonin, I. V.; Lavrentieva, L. G.; Subach, S. V.; Yakubenya, M. P.; Preobrazhenskiı, V. V.; Putyato, M. A.; Semyagin, B. R.; Bert, N. A.; Musikhin, Yu. G.; Chaldyshev, V. V.
- Abstract
This paper describes studies of InGaAs layers grown by molecular-beam epitaxy on InP (100) substrates at temperatures of 150-480 °C using various arsenic fluxes. It was found that lowering the epitaxy temperature leads to changes in the growth surface, trapping of excess arsenic, and an increased lattice parameter of the epitaxial layer. When these low-temperature (LT) grown samples are annealed, the lattice parameter relaxes and excess arsenic clusters form in the InGaAs matrix. For samples grown at 150 °C and annealed at 500 °C, the concentration of these clusters was ∼8 x 10[sup 16] cm[sup -3], with an average cluster size of ∼5 nm. Assuming that all the excess arsenic is initially trapped in the form of antisite defects, the magnitude of the LT-grown InGaAs lattice parameter relaxation caused by annealing implies an excess arsenic concentration (N[sub As] - N[sub Ga] - N[sub In])/(N[sub As] + N[sub Ga] + N[sub In]) = 0.4 at.%. For layers of InGaAs grown at 150 °C, a high concentration of free electrons (∼ 1 x 10[sup 18] cm[sup -3]) is characteristic. Annealing such layers at 500 °C decreases the concentration of electrons to ∼ 1 x 10[sup 17] cm[sup -3]. The results obtained here indicate that this change in the free-electron concentration correlates qualitatively with the change in excess arsenic concentration in the layers.
- Subjects
GALLIUM arsenide semiconductors; MOLECULAR beam epitaxy
- Publication
Semiconductors, 1999, Vol 33, Issue 8, p824
- ISSN
1063-7826
- Publication type
Article
- DOI
10.1134/1.1187790