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- Title
Photosensitive structures based on porous silicon.
- Authors
Kaganovich, É. B.; Manoılov, É. G.; Svechnikov, S. V.
- Abstract
The electrical and photoelectric properties of two types of sandwich structures are discussed: Al/porous silicon/single-crystal silicon (c-Si)/Al with thin and thick layers of porous silicon, obtained by chemical coloration etching without applying an electric field. It is established that the properties of the structures with thin porous silicon layers are determined by the porous-silicon-c-Si heterojunction. Its properties are explained in terms of an energy-band diagram of an isotypic heterojunction with opposite directions of band bending on the two sides of the junction, caused by the appearance of local states at the boundary. The photosensitivity of the structures with a thick porous silicon layer is determined by the photoconductivity of the porous silicon. The maximum of the spectral dependence of the photoconductivity of the porous silicon layers is at 400-500 nm. These results are compared with those known for structures based on porous silicon obtained by anodization.
- Subjects
POROUS silicon; PHOTOELECTRICITY; SEMICONDUCTOR etching
- Publication
Semiconductors, 1999, Vol 33, Issue 3, p327
- ISSN
1063-7826
- Publication type
Article
- DOI
10.1134/1.1187689