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Generation in a microstrip-resonator-stabilized double-barrier resonant tunneling structure
Published in:
Semiconductors, 1998, v. 32, n. 1, p. 112, doi. 10.1134/1.1187365
By:
- Beloushkin, A. A.;
- Efimov, Yu. A.;
- Ignat'ev, A. S.;
- Karuzskii, A. L.;
- Murzin, V. N.;
- Perestoronin, A. V.;
- Rasulova, G. K.;
- Tskhovrebov, A. M.;
- Chizhevskii, E. G.
Publication type:
Article
Characterization of GaAs/InxGa1_xAS quantum-dot heterostructures by electrical and optical methods
Published in:
Semiconductors, 1998, v. 32, n. 1, p. 99, doi. 10.1134/1.1187370
By:
- Aleshkin, V. Ya.;
- Gaponova, D. M.;
- Gusev, S. A.;
- Danil'tsev, V. M.;
- Krasil'nik, Z. F.;
- Murel, A. V.;
- Paramonov, L. V.;
- Revin, D. G.;
- Khrykin, O. I.;
- Shashkin, V. I.
Publication type:
Article
Interimpurity light absorption in thin wires of Ill-V-type semiconductors
Published in:
Semiconductors, 1998, v. 32, n. 1, p. 96, doi. 10.1134/1.1187369
By:
- Dzhotyan, A. P.;
- Kazaryan, E. M.;
- Chirkinyan, A. S.
Publication type:
Article
Exciton polaritons in long-period quantum-well structures
Published in:
Semiconductors, 1998, v. 32, n. 1, p. 90, doi. 10.1134/1.1187364
By:
- Vladimirova, M. R.;
- Ivchenko, E. L.;
- Kavokin, A. V.
Publication type:
Article
Formation of InAs quantum dots in a GaAs matrix during growth on misoriented substrates
Published in:
Semiconductors, 1998, v. 32, n. 1, p. 84, doi. 10.1134/1.1187363
By:
- Tsatsul'nikov, A. F.;
- Volovik, B. V.;
- Ledentsov, N. N.;
- Maksimov, M. V.;
- Egorov, A. Yu.;
- Zhukov,, A. E.;
- Kovsh, A. R.;
- Ustinov, V. M.;
- Chen, Chao;
- Kop'ev, P. S.;
- AIferov, Zh. I.;
- Petrov, V. N.;
- Tsirlin,, G. E.;
- Bimberg, D.
Publication type:
Article
Commensurate and incommensurate indium phases on a (111)A InAs surface
Published in:
Semiconductors, 1998, v. 32, n. 1, p. 78, doi. 10.1134/1.1187368
By:
- Galitsyn, Yu. G.;
- Mansurov, V. G.;
- Marahovka, I. I.;
- Petrenko, I. P.
Publication type:
Article
Relation between the optoelectronic parameters of amorphous hydrogenated silicon films deposited at high temperatures and their microstructure
Published in:
Semiconductors, 1998, v. 32, n. 1, p. 109, doi. 10.1134/1.1187372
By:
- Adriaenssens, G. J.;
- Grevendonk, W.;
- Golikova, O. A.
Publication type:
Article
Relaxation of light-induced metastable state of boron-doped p-type a-Si-H
Published in:
Semiconductors, 1998, v. 32, n. 1, p. 105, doi. 10.1134/1.1187371
By:
- Kazanskii, A. G.;
- Larina, E. V.
Publication type:
Article
Temperature anomalies of the work function and relaxation of the surface conductivity of n-type Si in the presence of structural defects
Published in:
Semiconductors, 1998, v. 32, n. 1, p. 71, doi. 10.1134/1.1187362
By:
- Bochkareva, N. I.;
- Klochkov, A. V.
Publication type:
Article
Photoelectric properties of structures based on TIInS2 single crystals
Published in:
Semiconductors, 1998, v. 32, n. 1, p. 67
By:
- lida, S.;
- Mamedov, N.;
- Rud', V. Yu.;
- Rud', Yu. V.
Publication type:
Article
Photoelectric properties of n-CdS/p-lnP heterojunctions
Published in:
Semiconductors, 1998, v. 32, n. 1, p. 61, doi. 10.1134/1.1187360
By:
- Botnaryuk, V. M.;
- Gorchak, L. V.;
- Diaconu, I. I.;
- Rud', V. Yu.;
- Rud', Yu. V.
Publication type:
Article
Calculation of the Schottky barrier height at the early stage of formation of the (silicon carbide)-(metallic submonolayer) contact
Published in:
Semiconductors, 1998, v. 32, n. 1, p. 58, doi. 10.1134/1.1187359
By:
- Davydov, S. Yu.;
- Lebedev, A. A.;
- Tikhonov, S. K.
Publication type:
Article
Impact ionization luminescence of InGaN/AIGaN/GaN p-n-heterostructures
Published in:
Semiconductors, 1998, v. 32, n. 1, p. 54, doi. 10.1134/1.1187358
By:
- Kovalev, A. N.;
- Manyakhin, F. I.;
- Kudryashov, V. E.;
- Turkin, A. N.;
- Yunovich, A. E.
Publication type:
Article
On C-V profiling near an isotypic heterojunction
Published in:
Semiconductors, 1998, v. 32, n. 1, p. 52, doi. 10.1134/1.1187357
By:
- Zubkov, V. I.;
- Melnik, M. A.;
- Solomonov, A. V.
Publication type:
Article
Effect of selenium on the galvanomagnetic properties of the diluted magnetic semiconductor Hg1 _ xMnxTe1 _ ySey
Published in:
Semiconductors, 1998, v. 32, n. 1, p. 49, doi. 10.1134/1.1187367
By:
- Kulbachinskii, V. A.;
- Churilov, I. A.;
- Maryanchuk, P. D.;
- Lunin, R. A.
Publication type:
Article
Manganese-related recombination centers in epitaxial GaAs grown from a bismuth melt
Published in:
Semiconductors, 1998, v. 32, n. 1, p. 43, doi. 10.1134/1.1187366
By:
- Zhuravlev, K. S.;
- Shamirzaev, T.;
- Yakusheva, N. A.
Publication type:
Article
Intrinsic defect states in PbTe single-crystal films grown by laser-modulated epitaxy
Published in:
Semiconductors, 1998, v. 32, n. 1, p. 40, doi. 10.1134/1.1187373
By:
- Plyatsko, S. V.
Publication type:
Article
Filling of dislocation levels in strong electric fields
Published in:
Semiconductors, 1998, v. 32, n. 1, p. 29, doi. 10.1134/1.1187354
By:
- Veliev, Z. A.
Publication type:
Article
The history and future of semiconductor heterostructures
Published in:
Semiconductors, 1998, v. 32, n. 1, p. 1, doi. 10.1134/1.1187350
By:
- Alferov, Zh. I.
Publication type:
Article
Optical characteristics of 1.18-eV luminescence band complexes in n-GaAs:Sn(Si): results of a photoluminescence study with polarized resonant excitation
Published in:
Semiconductors, 1998, v. 32, n. 1, p. 33, doi. 10.1134/1.1187356
By:
- Gutkin, A. A.;
- Reshchikov, M. A.;
- Sedov, V. E.;
- Piotrowski, T.;
- Pultorak, J.
Publication type:
Article
Influence of the intensity of 7 irradiation on the photoluminescence of GaAs:Te
Published in:
Semiconductors, 1998, v. 32, n. 1, p. 31, doi. 10.1134/1.1187355
By:
- Dubovik, V. I.;
- Bogdanova, V. A.;
- Davletkil'deev, N. A.;
- Semikolenova, N. A.;
- Shutyak, O. A.
Publication type:
Article
High-resolution x-ray diffraction study of InAs-GaAs superlattices grown by molecular-beam epitaxy at low temperature
Published in:
Semiconductors, 1998, v. 32, n. 1, p. 19, doi. 10.1134/1.1187352
By:
- Faleev, N. N.;
- Chaldyshev, V. V.;
- Kunitsyn, A. E.;
- Tret'yakov, V. V.;
- Preobrazhenskii, V. V.;
- Putyato, M. A.;
- Semyagin, B. R.
Publication type:
Article
Photoluminescence of cadmium telluride recrystallized by nanosecond pulsed laser irradiation
Published in:
Semiconductors, 1998, v. 32, n. 1, p. 26, doi. 10.1134/1.1187353
By:
- Babentsov, V. N.;
- Tarbaev, N. I.
Publication type:
Article
Nonequilibrium segregation of phosphorus in the system silicon dioxide-silicon
Published in:
Semiconductors, 1998, v. 32, n. 1, p. 15, doi. 10.1134/1.1187351
By:
- Aleksandrov, O. V.;
- Afonin, N. N.
Publication type:
Article

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