We found a match
Your institution may have rights to this item. Sign in to continue.
- Title
Optical and electrical properties of Al<sub>1-x</sub>In<sub>x</sub>N films with a wide middle-composition range by RF sputtering.
- Authors
Chen, JianJin; Qi, DongLi; Li, XueFei; Song, JianYu; Shen, LongHai
- Abstract
Al1-xInxN films with a wide middle-composition range were deposited on Si/glass substrate by radio-frequency magnetron sputtering. The microstructures of as-grown Al1-xInxN films were characterised by AFM, SEM, and EDS. The optical bandgap of Al1-xInxN films can be tuned from 1.85 to 2.93 eV by decreasing the In content from 0.7 to 0.3, covering the whole visible region. Raman spectroscopy demonstrates A1 and E2 (high) phonon modes in the Al1-xInxN films. The photoluminescence spectra of Al1-xInxN films reveals the emission band originates from the band edge-related radiation. The optical bowing parameter of Al1-xInxN films is confirmed to be 2.28 eV. The conductivity of the films increases with increasing In content. The I-V curves show the Al1-xInxN films form quasi-Ohmic contact with W electrodes.
- Subjects
MAGNETRON sputtering; RADIOFREQUENCY sputtering; OPTICAL properties; RAMAN spectroscopy; PHONONS; RADIATION
- Publication
Applied Physics A: Materials Science & Processing, 2022, Vol 128, Issue 2, p1
- ISSN
0947-8396
- Publication type
Article
- DOI
10.1007/s00339-022-05289-3