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- Title
The kinetic of point defect transformation during the annealing process in electron-irradiated silicon.
- Authors
Gaidar, G. P.; Dolgolenko, A. P.; Litovchenko, P. G.
- Abstract
The A-centers (VO) annealing and transformation of precursors to form stable CiOi defects during these processes are described. It was found the necessity to take into account annihilation of vacancy type defects with the interstitial type mobile defects to describe the annealing of defects. It was shown that the energies of migration for vacancy (V) and interstitial carbon atoms Ci that are defined by the degree of their localization in silicon lattice at the temperature close to 550 K are equal Due to image rights restrictions, multiple line equation(s) cannot be graphically displayed., and Due to image rights restrictions, multiple line equation(s) cannot be graphically displayed., accordingly. The values for potential barriers and their positions on the migration path of interstitial carbon atoms to oxygen (Oi) in the region for capture of Ci atom by Oi atom (with the radius 14.7 Å) are determined. It was brought evidences that vibration band of absorption at 865.9 cm-1 is attributed to A - center modified by carbon, and the band is attributed to a metastable state of CiO2i defect associated with an oxygen dimer. The position of the center donor level in the forbidden band of silicon is determined as CV + 0.415 eV.
- Subjects
POINT defects; PHASE transitions; ANNEALING of semiconductors; SILICON; ELECTRONS; IRRADIATION; TEMPERATURE measurements
- Publication
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2011, Vol 14, Issue 2, p213
- ISSN
1560-8034
- Publication type
Article