We found a match
Your institution may have rights to this item. Sign in to continue.
- Title
High- k gate stack Hf<sub> x </sub>Ti<sub>1− x </sub>ON/SiO<sub>2</sub> for SiC MOS devices.
- Authors
Lin, L. M.; Lai, P. T.
- Abstract
In order to reduce the electric field in the gate dielectric and thus solve the reliability problem, high dielectric-constant ( k) gate dielectrics Hf x Ti1− x O2 and Hf x Ti1− x ON were applied in SiC metal-oxide-semiconductor (MOS) devices for the first time. An ultra-thin thermally grown SiO2 was used as an interlayer between SiC and the high- k materials to block electron injection into the low-barrier high- k materials. Incorporating nitrogen (by sputtering in an Ar/N2 ambient) into the hafnium–titanium oxide stacked with a SiO2 interlayer (Hf x Ti1− x O2/SiO2) resulted in better gate dielectric for MOS capacitor, such as less oxide charges and better interface quality. Incorporation of nitrogen also increased the dielectric constant of the oxide, but caused higher dielectric leakage, which was suppressed by the SiO2 interlayer.
- Subjects
NITROGEN; NONMETALS; TITANIUM group; TITANIUM dioxide; ELECTRIC fields; ELECTRIC insulators &; insulation; ELECTRICAL engineering materials; ELECTROMAGNETIC fields; ENERGY storage
- Publication
Journal of Materials Science: Materials in Electronics, 2008, Vol 19, Issue 8/9, p894
- ISSN
0957-4522
- Publication type
Article
- DOI
10.1007/s10854-008-9623-3