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- Title
Aluminum doped ZnO by reactive sputtering of coaxial Zn and Al metallic targets.
- Authors
Santana-Aranda, M.; Armenta-Estrada, A.; Mendoza-Barrera, C.; Michel, C.; Chávez-Chávez, A.; Jiménez-Sandoval, S.; Meléndez-Lira, M.
- Abstract
Transparent films of aluminum doped zinc oxide were obtained by reactive sputtering employing metallic zinc and aluminum targets. The targets were coaxially superposed in a single magnetron, by using a center hollow aluminum plate. Two different hole radii in the aluminum target were employed trying to modify the aluminum content. Sputtering power was kept constant at 50 W and temperature was set to 300, 400 and 500 °C. Oxygen partial pressure was 20 and 40% in argon. Film transparencies up to 85% were obtained using this method. X-ray diffraction and Raman spectroscopy measurements were performed to monitor the crystalline structure of the films. Sample resistance was determined by current voltage measurements.
- Subjects
ALUMINUM; ZINC oxide; CHEMICAL reactions; MAGNETRONS; RAMAN spectroscopy
- Publication
Journal of Materials Science: Materials in Electronics, 2007, Vol 18, Issue 6, p611
- ISSN
0957-4522
- Publication type
Article
- DOI
10.1007/s10854-006-9115-2