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- Title
Preparation of amorphous carbon nitride films from toluene and nitrogen by rf-PECVD.
- Authors
Aono, M.; Yamaguchi, K.; Kitazawa, N.; Watanabe, Y.
- Abstract
Carbon nitride (CNx) films were prepared by radio frequency plasma enhanced chemical vapour deposition (rf-PECVD) from nitrogen gas and toluene vapour onto Si(100) substrates. The films were characterised by X-ray diffraction (XRD), Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), and Fourier transform infrared spectrometry (FT-IR). XRD measurements suggested that the films have an amorphous structure. Toluene was reduced by rf plasma of 180 W. The CNx films prepared contain very little hydrogen and hydrocarbon. It is found that increases in nitrogen gas pressure and rf-power levels lead to an increase in the nitrogen content in the deposited films. The maximum value of nitrogen content x = N/C is approximately 0.3 with rf-power of 180 W, toluene vapour pressure of 10 Pa, and nitrogen gas pressure of 40 Pa.
- Subjects
NITRIDES; CARBON; THIN films; RADIO frequency; CHEMICAL vapor deposition; AMORPHOUS substances
- Publication
Materials Science & Technology, 2004, Vol 20, Issue 9, p1119
- ISSN
0267-0836
- Publication type
Article
- DOI
10.1179/026708304225019696