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- Title
Weak anti-localization effect in topological Ni<sub>3</sub>In<sub>2</sub>S<sub>2</sub> single crystal.
- Authors
Kumar, Kapil; Kumar, Yogesh; Awana, V. P. S.
- Abstract
Ni3In2S2 is the most recent (Fang in Sci. China Mater. 66:2032, 2023 and Zhang in Npj Comput. Mater. 8:155, 2022) entrant into the family of topological insulator (TI) materials, the same exhibits very high MR in low-temperature regime. Here, we report the crystal growth, structural, micro-structural, and magneto-transport study of Ni3In2S2 down to 2.5 K under applied field of up to 14Tesla. The phase purity and growth direction of single crystal is studied by performing XRD on both powder and flake, and further the Rietveld analysis is also carried out. The electrical transport measurements are studied and the grown crystal showed metallic behavior down to 2.5 K, with ρ300K/ρ2.5Κ ratio of around 7. A significant variation in magnetoresistance (MR) values are observed as the temperature is increased from 2.5 to 200 K under applied field of up to 14 Tesla. Interestingly the low T (2.5 K), MR shows a clear v-type characteristic TI cusp. Magnetoconductivity data at low fields (± 1Tesla) is fitted with Hikami Larkin Nagaoka (HLN) model, which showed the presence of weak anti-localization effect in the synthesized Ni3In2S2 crystal at low-temperatures. We have successfully grown near single-phase Ni3In2S2 and its TI behavior is demonstrated by magneto-transport measurements.
- Publication
Journal of Materials Science: Materials in Electronics, 2023, Vol 34, Issue 36, p1
- ISSN
0957-4522
- Publication type
Article
- DOI
10.1007/s10854-023-11756-1