We found a match
Your institution may have rights to this item. Sign in to continue.
- Title
The effects of hydrogenation on the properties of heavy ion irradiated β-Ga<sub>2</sub>O<sub>3</sub>.
- Authors
Polyakov, A. Y.; Kuznetsov, A.; Azarov, A.; Miakonkikh, A. V.; Chernykh, A. V.; Vasilev, A. A.; Shchemerov, I. V.; Kochkova, A. I.; Matros, N. R.; Pearton, S. J.
- Abstract
Defects created in lightly Sn-doped (2 × 1016 cm−3) (010)-oriented bulk β-Ga2O3 implanted with 1.2 MeV, 3 × 1015 cm−2 197Au+ ions before and after treatment in hydrogen plasmas at 330 °C were studied by X-ray measurements, Rutherford backscattering spectra, capacitance–voltage, current–voltage, admittance spectra and deep level transient spectroscopy. Au implantation creates defects that produce total depletion of carriers in the top 1.5 µm and introduces electron traps with energy levels at Ec-0.7 eV, Ec-1.05 eV, Ec-0.45 eV, and deep acceptors with optical ionization thresholds near 1.3 eV, 2.3 eV and 3.1 eV, similar to the centers dominating the spectra of deep traps in β-Ga2O3. Hydrogen plasma treatment greatly enhances the photocurrent and photo-capacitance and decreases the width of the insulating layer produced by Au implantation. The results can be explained by hydrogen passivation of the triply charged Ga vacancies and doubly charged split Ga vacancies acceptors in the implanted region, returning part of this region to n-type conductivity.
- Publication
Journal of Materials Science: Materials in Electronics, 2023, Vol 34, Issue 15, p1
- ISSN
0957-4522
- Publication type
Article
- DOI
10.1007/s10854-023-10628-y