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- Title
Fabrication of Large-Area Molybdenum Disulfide Device Arrays Using Graphene/Ti Contacts.
- Authors
Son, Myungwoo; Jang, Jaewon; Kim, Dong Chul; Lee, Seunghyup; Shin, Hyo-Soon; Ham, Moon-Ho; Chee, Sang-Soo
- Abstract
Two-dimensional (2D) molybdenum disulfide (MoS2) is the most mature material in 2D material fields owing to its relatively high mobility and scalability. Such noticeable properties enable it to realize practical electronic and optoelectronic applications. However, contact engineering for large-area MoS2 films has not yet been established, although contact property is directly associated to the device performance. Herein, we introduce graphene-interlayered Ti contacts (graphene/Ti) into large-area MoS2 device arrays using a wet-transfer method. We achieve MoS2 devices with superior electrical and photoelectrical properties using graphene/Ti contacts, with a field-effect mobility of 18.3 cm2/V∙s, on/off current ratio of 3 × 107, responsivity of 850 A/W, and detectivity of 2 × 1012 Jones. This outstanding performance is attributable to a reduction in the Schottky barrier height of the resultant devices, which arises from the decreased work function of graphene induced by the charge transfer from Ti. Our research offers a direction toward large-scale electronic and optoelectronic applications based on 2D materials.
- Subjects
MOLYBDENUM disulfide; SCHOTTKY barrier; GRAPHENE; THIN film transistors; CHARGE transfer; ELECTRON work function
- Publication
Molecules, 2021, Vol 26, Issue 15, p4394
- ISSN
1420-3049
- Publication type
Article
- DOI
10.3390/molecules26154394