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- Title
DEVELOPMENT OF HIGHLY STABLE HYDROGENATED AMORPHOUS SILICON FILMS FOR APPLICATION IN SOLAR CELLS.
- Authors
LEI, Q. S.; WU, Z. M.; XI, J. P.; GENG, X. H.; ZHAO, Y.; SUN, J.
- Abstract
Highly stable hydrogenated amorphous silicon (a-Si:H) films were developed by very high frequency plasma enhanced chemical vapor deposition (VHF PECVD). Their electrical and structural properties were studied. The films were applied as i-layers for p-i-n solar cells. The stability of intrinsic films as well as solar cells was studied. Results suggest that a-Si:H films prepared at high hydrogen dilution ratio (R) and low plasma power (PW) have low hydrogen content (CH) and small microstructure factor (RH) and show high stability against light illumination. The device with i-layer prepared at PW=5W and R=10 shows a high stability with degradation in fill factor and efficiency of 3.23% and 11.64%, respectively, over 1000 hours illumination. However, the device with i-layer prepared at higher plasma power (PW=25W) and lower hydrogen dilution ratio (R=5) was much less stable. The stability of the devices is directly related to the stability of the intrinsic materials.
- Subjects
SILICON; PLASMA gases; CHEMICAL vapor deposition; SOLAR cells; HYDROGEN; SOLAR energy
- Publication
International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2006, Vol 20, Issue 14, p2035
- ISSN
0217-9792
- Publication type
Article
- DOI
10.1142/S0217979206033309