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- Title
Ultrasensitive Electrical Detection of Hemagglutinin for Point-of-Care Detection of Influenza Virus Based on a CMP-NANA Probe and Top-Down Processed Silicon Nanowire Field-Effect Transistors.
- Authors
Uhm, Mihee; Lee, Jin-Moo; Lee, Jieun; Lee, Jung Han; Choi, Sungju; Park, Byung-Gook; Kim, Dong Myong; Choi, Sung-Jin; Mo, Hyun-Sun; Jeong, Yong-Joo; Kim, Dae Hwan
- Abstract
Rather than the internal genome nucleic acids, the biomolecules on the surface of the influenza virus itself should be detected for a more exact and rapid point-of-care yes/no decision for influenza virus-induced infectious diseases. This work demonstrates the ultrasensitive electrical detection of the HA1 domain of hemagglutinin (HA), a representative viral surface protein of the influenza virus, using the top-down complementary metal oxide semiconductor (CMOS) processed silicon nanowire (SiNW) field-effect transistor (FET) configuration. Cytidine-5′-monophospho-N-acetylneuraminic acid (CMP-NANA) was employed as a probe that specifically binds both to the aldehyde self-aligned monolayer on the SiNWs and to HA1 simultaneously. CMP-NANA was serially combined with two kinds of linkers, namely 3-aminopropyltriethoxysilane and glutaraldehyde. The surface functionalization used was verified using the purification of glutathione S-transferase-tagged HA1, contact angle measurement, enzyme-linked immunosorbent assay test, and isoelectric focusing analysis. The proposed functionalized SiNW FET showed high sensitivities of the threshold voltage shift (ΔVT) ~51 mV/pH and the ΔVT = 112 mV (63 mV/decade) with an ultralow detectable range of 1 fM of target protein HA1.
- Subjects
INFLUENZA A virus; FIELD-effect transistors; COMPLEMENTARY metal oxide semiconductors; HEMAGGLUTININ; ENZYME-linked immunosorbent assay; HUMIC acid
- Publication
Sensors (14248220), 2019, Vol 19, Issue 20, p4502
- ISSN
1424-8220
- Publication type
Article
- DOI
10.3390/s19204502