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- Title
Boltzmann Switching MoS<sub>2</sub> Metal–Semiconductor Field‐Effect Transistors Enabled by Monolithic‐Oxide‐Gapped Metal Gates at the Schottky–Mott Limit (Adv. Mater. 29/2024)
- Authors
Kim, Yeon Ho; Jiang, Wei; Lee, Donghun; Moon, Donghoon; Choi, Hyun‐Young; Shin, June‐Chul; Jeong, Yeonsu; Kim, Jong Chan; Lee, Jaeho; Huh, Woong; Han, Chang Yong; So, Jae‐Pil; Kim, Tae Soo; Kim, Seong Been; Koo, Hyun Cheol; Wang, Gunuk; Kang, Kibum; Park, Hong‐Gyu; Jeong, Hu Young; Im, Seongil
- Publication
Advanced Materials, 2024, Vol 36, Issue 29, p1
- ISSN
0935-9648
- Publication type
Article
- DOI
10.1002/adma.202314274