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- Title
Influence of Rapid Thermal Annealing on the Characteristics of Sn-Doped Ga 2 O 3 Films Fabricated Using Plasma-Enhanced Atomic Layer Deposition.
- Authors
Shen, Yi; Ma, Hong-Ping; Wang, Zhen-Yu; Gu, Lin; Zhang, Jie; Li, Ao; Yang, Ming-Yang; Zhang, Qing-Chun
- Abstract
In this work, Sn-doped Ga2O3 films fabricated using plasma-enhanced atomic layer deposition were treated by rapid thermal annealing (RTA). The RTA influence on the chemical state, surface morphology, energy band alignment, and electrical properties of Sn-doped Ga2O3 films were thoroughly investigated. The results of X-ray photoelectron spectroscopy (XPS) demonstrated that Sn atoms were successfully doped into these films. Moreover, energy band alignments were obtained by the energy-loss peak of the O 1s spectrum and valence band spectra and thoroughly discussed. X-ray reflectivity (XRR) and atomic force microscope (AFM) measurements indicated that the Sn-doping level affects the interfacial microstructure and surface morphology. As the Sn content increases, the film thickness decreases while the roughness increases. Finally, the leakage current-voltage (I-V) characteristics proved that the Sn-doped Ga2O3 films have a large breakdown field. In I-V tests, all metal oxide semiconductor (MOS) capacitors exhibited a hard breakdown. This research demonstrates a method for manufacturing high-performance optoelectronic devices with desired properties.
- Subjects
RAPID thermal processing; ATOMIC layer deposition; METAL oxide semiconductors; X-ray photoelectron spectroscopy; ATOMIC force microscopes; PLASMA deposition
- Publication
Crystals (2073-4352), 2023, Vol 13, Issue 2, p301
- ISSN
2073-4352
- Publication type
Article
- DOI
10.3390/cryst13020301