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- Title
Dielectric Properties at Microwaves Frequencies of (Ni, Ti, La, Mg)-Doped Ba.
- Authors
Ponchel, Freddy; Rémiens, Denis; Midy, Jean; Legier, Jean-Fançois; Soyer, Caroline; Lasri, Tuami; Guegan, Guillaume
- Abstract
Pure and doped Ba0.3Sr0.7TiO3 thin films are deposited by radio frequency magnetron sputtering with the in situ process on highresistivity silicon substrates. We have studied four dopants: La, Ti,Mg, and Ni with different concentrations from 1 to 5 mol%. Permittivity, dielectrics losses, and tunability are determined up to 60 GHz using a coplanar waveguide. This study highlights the difficulty to improve these electrical properties simultaneously, in particular the loss tangent and the tunability. The best improvement is obtained in case of 5 mol%La for which the losses are in the order of 7.4%, the tunability and the figure of merite are around 29% and 3.9%, respectively, at 60 GHz.
- Subjects
BARIUM; THIN films; MAGNETRON sputtering; SILICON; LANTHANUM; TITANIUM; MANGANESE
- Publication
Journal of the American Ceramic Society, 2011, Vol 94, Issue 6, p1661
- ISSN
0002-7820
- Publication type
Article
- DOI
10.1111/j.1551-2916.2011.04546.x