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- Title
Studies on structural, optical, and photoelectric properties of CdS<sub>1- x</sub>Se<sub> x</sub> films fabricated by selenization of chemical bath deposited CdS films.
- Authors
Lu, Tianyu; Gu, Han; Ge, Zhenhua; Zhang, Lei; Wu, Wangping; Wang, Zhicheng; Fang, Yong; Han, Zhida; Qian, Bin; Jiang, Xuefan
- Abstract
In this paper, high-photosensitive CdS1- xSe x films are synthesized by a two-step technique, which includes the chemical bath deposition of CdS films and a following selenization process. The structural, optical, and photoelectric properties of the CdS1- xSe x films were investigated. With the substitution of selenium for sulfur atoms, grain sizes of the as-prepared CdS1- xSe x films are effectively enlarged and reach the scales of the films thickness when the selenization temperature exceeds 450 °C. With increasing the selenization temperature from 350 to 550 °C, the band gaps of CdS1- xSe x films gradually decrease from 2.37 to 1.82 eV. Under the co-action of the grain-size enlargement and band-gap decrease, the CdS1- xSe x films fabricated at 450 °C show very pronounced photosensitivity. Noteworthy, the ratio of photo to dark conductivity of the CdS1- xSe x film selenized at 450 °C reaches 1.1 × 105, suggesting a promising application potential in the photoelectric devices.
- Subjects
OPTICAL properties of cadmium sulfide; ELECTRIC properties of cadmium sulfide; ELECTRIC properties of cadmium selenide; OPTICAL properties of cadmium selenide; PHOTOELECTRICITY; GRAIN size; TEMPERATURE effect
- Publication
Physica Status Solidi. A: Applications & Materials Science, 2017, Vol 214, Issue 2, pn/a
- ISSN
1862-6300
- Publication type
Article
- DOI
10.1002/pssa.201600664