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- Title
A detailed study of self-assembled (Al,Ga)InP quantum dots grown by molecular beam epitaxy.
- Authors
Baumann, Vasilij; Rödel, Reinhold; Heidemann, Matthias; Schneider, Christian; Kamp, Martin; Höfling, Sven
- Abstract
We report on the structural and optical properties of self-assembled (Al,Ga)InP quantum dots (QDs) with varying material composition embedded in a (Al0.30Ga0.70)0.51In0.49P matrix. The samples were grown by gas-source molecular beam epitaxy. Atomic force microscopy was used to study the structural properties of the quantum dots, revealing a strong dependence of the morphology on the material composition. Low-temperature ensemble photoluminescence was observed between 590 nm and 720 nm. Temperature and excitation power dependent, as well as time resolved measurements were performed, indicating a significantly reduced electron confinement and a reduced overlap of the electron/hole wavefunctions for Al- and/or Ga-rich compositions.
- Subjects
QUANTUM dots; MOLECULAR beam epitaxy; ATOMIC force microscopy; TEMPERATURE; PHOTOLUMINESCENCE; WAVE functions
- Publication
Physica Status Solidi. A: Applications & Materials Science, 2014, Vol 211, Issue 11, p2601
- ISSN
1862-6300
- Publication type
Article
- DOI
10.1002/pssa.201431348