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- Title
Simulation of multilevel polarization in ferroelectric tunnel junctions.
- Authors
Li, J. Q.; Xiong, Y.; Tang, M. H.; Guo, H. X.; Zhao, W.; Xiao, Y. G.; Tang, Z. H.; Yan, S. A.; Zhang, W. L.; Zhou, Y. C.; Yang, F.; He, J.
- Abstract
A theoretical model of a ferroelectric tunnel junction with multilevel polarization states is proposed, and the model is capable of achieving multiply ( i.e., four or eight) logic states by setting different polarization states in the ferroelectric thin film. The tunneling conductance that strongly depends on the barrier potential is calculated by applying a free-electron direct quantum tunneling method. The dependences of the conductance on bias voltage, barrier width, dielectric constant, and electric polarization are carefully investigated. The results may provide some insights into the realization of ultrahigh-density memory.
- Subjects
FERROELECTRIC materials; TUNNEL junctions (Materials science); THIN films; ELECTRIC polarizability; MATERIALS science
- Publication
Physica Status Solidi (B), 2014, Vol 251, Issue 2, p469
- ISSN
0370-1972
- Publication type
Article
- DOI
10.1002/pssb.201349222