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- Title
Multi‐Level Memory: Multi‐Level Long‐Term Memory Resembling Human Memory Based on Photosensitive Field‐Effect Transistors with Stable Interfacial Deep Traps (Adv. Electron. Mater. 4/2020).
- Authors
Kim, Taeyoon; Lim, Jung Wook; Yun, Sun Jin; Lee, Seong Hyun; Jung, Kwang Hoon
- Abstract
Multi-Level Memory: Multi-Level Long-Term Memory Resembling Human Memory Based on Photosensitive Field-Effect Transistors with Stable Interfacial Deep Traps (Adv. In article number 1901044, a novel TiO SB 2 sb -metaloxide-semiconductor field-effect transistor (MOSFET)-based memory device that effectively converts learned data to long-term memory (LTM) is reported by Jung Wook Lim, Sun Jin Yun and co-workers. It is programmed by UV light and uses deep trap sites at the interface between the TiO SB 2 sb and Al SB 2 sb O SB 3 sb layers to retain data.
- Subjects
LONG-term memory; FIELD-effect transistors; MEMORY; ELECTRONS; TRAPPING
- Publication
Advanced Electronic Materials, 2020, Vol 6, Issue 4, p1
- ISSN
2199-160X
- Publication type
Article
- DOI
10.1002/aelm.202070018