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- Title
High-Q Transformer Neutralization Technique for W-Band Dual-Band LNA Using 0.1 µm GaAs pHEMT Technology.
- Authors
Taejoo Sim; Dong-min Lee; Wansik Kim; Kichul Kim; Jeung Won Choi; Min-Su Kim; Junghyun Kim
- Abstract
In this study, a dual-band low-noise amplifier (LNA) was implemented by applying a transformer-based neutralization technology to the W-band. Incorporating the neutralization technique was difficult owing to performance degradation in the W-band. However, circuit performance was enhanced thanks to the layout optimization of transformer-based neutralization networks, and the improved operation was confirmed in the W-band. The neutralization technique was implemented in four stages with a 0.1-µm gallium arsenide (GaAs) pseudomorphic high-electron-mobility-transistor monolithic microwave integrated circuit LNA. The LNA showed small signal gains of 20.3 dB and 21.7 dB and noise figures of 5.0 dB and 6.4 dB (at 84 GHz and 96 GHz, respectively) while consuming 46 mW from a 1-V supply.
- Subjects
MONOLITHIC microwave integrated circuits; AUDITING standards; GALLIUM arsenide; LOW noise amplifiers; VOLTAGE-controlled oscillators
- Publication
Journal of Electromagnetic Engineering & Science, 2023, Vol 23, Issue 6, p482
- ISSN
2671-7255
- Publication type
Article
- DOI
10.26866/jees.2023.6.r.193