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- Title
Epitaxial Growth of GaN on Magnetron Sputtered AlN/Hexagonal BN/Sapphire Substrates.
- Authors
Wu, Jinxing; Li, Peixian; Xu, Shengrui; Zhou, Xiaowei; Tao, Hongchang; Yue, Wenkai; Wang, Yanli; Wu, Jiangtao; Zhang, Yachao; Hao, Yue
- Abstract
Magnetron sputtering is adopted to deposit ~25 nm thick AlN on the surface of hexagonal BN(h-BN)/sapphire substrates, followed by epitaxial GaN growth on top of the AlN/h-BN/sapphire substrate using a metal–organic chemical vapor deposition system. Compared to GaN grown on the h-BN/sapphire surface directly, this method results in a continuous and smooth GaN film with a smaller root mean square roughness. Besides, the introduction of the sputtered AlN layer reduces the dislocation density of GaN by 35.7%. We provide a pathway of GaN epitaxy on the h-BN surface, which significantly improves its surface morphology and crystal quality.
- Subjects
METAL organic chemical vapor deposition; GALLIUM nitride films; MAGNETRON sputtering; SAPPHIRES; CHEMICAL vapor deposition; CRYSTAL morphology; EPITAXY; DISLOCATION density; SQUARE root
- Publication
Materials (1996-1944), 2020, Vol 13, Issue 22, p5118
- ISSN
1996-1944
- Publication type
Article
- DOI
10.3390/ma13225118