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- Title
Kinetics of SiC Formation on Graphite Using N<sub>2</sub>-CO-SiO and N<sub>2</sub>-CO-H<sub>2</sub>-SiO Gas Mixtures.
- Authors
Oh, Joon Seok; Lee, Joonho
- Abstract
The formation of SiC on a graphite surface through the reaction between SiO gas and C was investigated. Experiments were conducted at 1843 K, 1873 K, and 1903 K (1570 °C, 1600 °C, and 1630 °C) under N2-CO-SiO or N2-CO-H2-SiO gas mixture atmospheres. The formation rate of SiC on the graphite increased with the increasing temperature and with the decreasing partial pressure of CO gas. The forward (kf) and backward (kb) reaction rate constants of SiC formation with SiO gas were obtained as follows: ln k f mol / c m 2 · s · atm = 29.175 - 76 , 083 / T ln k b mol / c m 2 · s · atm = 53.518 - 129 , 072 / T Under the N2-CO-H2-SiO gas mixture atmosphere, the formation rate of SiC on the graphite increased. It was observed that the formation of SiC whiskers was enhanced by the catalytic reaction in liquid Fe-based nanodroplets.
- Subjects
GAS mixtures; GRAPHITE; PARTIAL pressure; STABILITY constants; SURFACE reactions
- Publication
Metallurgical & Materials Transactions. Part B, 2019, Vol 50, Issue 4, p1808
- ISSN
1073-5615
- Publication type
Article
- DOI
10.1007/s11663-019-01598-w