Found: 10
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Saturation Velocity Measurement of Al<sub>0.7</sub>Ga<sub>0.3</sub>N-Channel High Electron Mobility Transistors.
- Published in:
- Journal of Electronic Materials, 2019, v. 48, n. 9, p. 5581, doi. 10.1007/s11664-019-07421-1
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- Article
Correlative Electron Energy-Loss Spectroscopy Bandgap Mapping and DFT Modeling in AlGaN Diodes.
- Published in:
- 2022
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- Publication type:
- Abstract
Defect analysis of star defects in GaN thin films grown on HVPE GaN substrates.
- Published in:
- 2021
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- Publication type:
- Abstract
Defect analysis of star defects in GaN thin films grown on HVPE GaN substrates.
- Published in:
- 2021
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- Abstract
Identification of Star Defects in Gallium Nitride with HREBSD and ECCI.
- Published in:
- Microscopy & Microanalysis, 2021, v. 27, n. 2, p. 257, doi. 10.1017/S143192762100009X
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- Publication type:
- Article
Measuring the minority carrier diffusion length in n-GaN using bulk STEM EBIC.
- Published in:
- Microscopy & Microanalysis, 2019, p. 1842, doi. 10.1017/S1431927618009698
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- Publication type:
- Article
Measuring the minority carrier diffusion length in n-GaN using bulk STEM EBIC.
- Published in:
- 2018
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- Publication type:
- Abstract
Interfacial Impurities and Their Electronic Signatures in High‐Voltage Regrown Nonpolar m‐Plane GaN Vertical p–n Diodes.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2020, v. 217, n. 7, p. 1, doi. 10.1002/pssa.201900757
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- Article
Defect-enabled electrical current leakage in ultraviolet light-emitting diodes (Phys. Status Solidi A 4∕2015).
- Published in:
- 2015
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- Publication type:
- Other
Defect-enabled electrical current leakage in ultraviolet light-emitting diodes.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2015, v. 212, n. 4, p. 723, doi. 10.1002/pssa.201400182
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- Publication type:
- Article