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- Title
A FinFET with one atomic layer channel.
- Authors
Chen, Mao-Lin; Sun, Xingdan; Liu, Hang; Wang, Hanwen; Zhu, Qianbing; Wang, Shasha; Du, Haifeng; Dong, Baojuan; Zhang, Jing; Sun, Yun; Qiu, Song; Alava, Thomas; Liu, Song; Sun, Dong-Ming; Han, Zheng
- Abstract
Since its invention in the 1960s, one of the most significant evolutions of metal-oxide-semiconductor field effect transistors (MOS-FETs) would be the three dimensionalized version that makes the semiconducting channel vertically wrapped by conformal gate electrodes, also recognized as FinFET. During the past decades, the width of fin (W fin ) in FinFETs has shrunk from about 150 nm to a few nanometers. However, W fin seems to have been levelling off in recent years, owing to the limitation of lithography precision. Here, we show that by adapting a template-growth method, different types of mono-layered two-dimensional crystals are isolated in a vertical manner. Based on this, FinFETs with one atomic layer fin are obtained, with on/off ratios reaching ~ 1 0 7 . Our findings push the FinFET to the sub 1 nm fin-width limit, and may shed light on the next generation nanoelectronics for higher integration and lower power consumption. FinFETs are an evolution of metal-oxide-semiconductor field effect transistors (MOSFETs) featuring a semiconducting channel vertically wrapped by conformal gate electrodes. Here, the authors use a two-dimensional semiconductor to push the FinFET width to sub-nm whilst achieving a 107 ON/OFF ratio.
- Subjects
METAL oxide semiconductor field-effect transistors; METAL oxide semiconductor field; FIELD-effect transistors; SEMICONDUCTORS; ELECTRODES; NANOELECTRONICS
- Publication
Nature Communications, 2020, Vol 11, Issue 1, p1
- ISSN
2041-1723
- Publication type
Article
- DOI
10.1038/s41467-020-15096-0