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- Title
Diffuse phase transition and leakage current characteristics of (PbSr)TiO thin films prepared by a sol-gel process.
- Authors
Cheng, T.; Tang, X.; Jiang, Y.; Liu, Q.
- Abstract
Nanocrystalline (PbSr)TiO (PSrT25) thin films were grown on Pt/Ti/SiO/Si substrates by using a sol-gel process. The dielectric constant and loss tanδ of Au/PSrT/Pt thin-films capacitor were 345 and 0.016 at 100 kHz, respectively. The dielectric constant of PSrT film changes significantly with applied dc bias field and has a tunability of 22.7 % under an applied field of 150 kV/cm. Phase transition of the PSrT25 film has shown the diffuse-type phase transition behavior. The leakage current varied depending on the voltage polarity. At low electrical field and with Au electrode biased negatively, the Au/PSrT interface exhibits a Schottky emission characteristic, while at higher fields, Poole-Frenkel dominated the electronic conduction.
- Subjects
NANOCRYSTALS; TIN oxides; THIN films; SOL-gel processes; PERMITTIVITY
- Publication
Journal of Materials Science: Materials in Electronics, 2014, Vol 25, Issue 5, p2072
- ISSN
0957-4522
- Publication type
Article
- DOI
10.1007/s10854-014-1842-1