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- Title
A Dry-Patterned Cu(Mg) Alloy Film as a Gate Electrode in a Thin-Film Transistor Liquid Crystal Display.
- Authors
Yang, H. J.; Ko, Y. K.; Jang, J.; Soh, H. S.; Chae, G.-S.; Hong, H. N.; Lee, J. G.
- Abstract
The annealing of a Cu(4.5at.%Mg)/SiO2/Si structure in ambient O2 at 10 mtorr and 300-500°C allows for the out-diffusion of the Mg to the Cu surface, forming a thin MgO (15 nm) layer on the surface. The surface MgO layer was patterned and successfully served as a hard mask for the subsequent dry etching of the underlying Mg-depleted Cu films using an O2 plasma and hexafluoroacetylacetone (H(hfac)) chemistry. The resultant MgO/Cu structure, with a taper slope of about 30° shows the feasibility of dry etching of Cu(Mg) alloy films using a surface MgO mask scheme. A dry-etched Cu(4.5at.%Mg) gate a-Si:H thin-film transistor (TFT) has a field-effect mobility of 0.86 cm²/Vs, a subthreshold swing of 1.08 V/dec, and a threshold voltage of 5.7 V. A novel process for the dry etching of Cu(Mg) alloy films that eliminates the use of a hard mask, such as Ti, and results in a reduction in the process steps is reported for the first time in this work.
- Subjects
PLASMA gases; ALLOYS; TITANIUM; THIN films; THIN-film circuits; LIQUID crystal displays; COPPER
- Publication
Journal of Electronic Materials, 2004, Vol 33, Issue 7, p780
- ISSN
0361-5235
- Publication type
Article
- DOI
10.1007/s11664-004-0241-4