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- Title
Investigation of Yttrium (Y)-doped ZnO (Y:ZnO)–Ga<sub>2</sub>O<sub>3</sub> core-shell nanowire/Si vertical heterojunctions for high-performance self-biased wideband photodetectors.
- Authors
Saha, Rajib; Chakrabarti, Subhananda; Karmakar, Anupam; Chattopadhyay, Sanatan
- Abstract
High interfacial area, less surface defects and wide light absorption capability of core-shell nanowire heterojunctions are broadly accepted as a potential candidate for self-biased, high-speed photodetectors. In the current study, Y:ZnO–Ga2O3 core-shell nanowires' heterojunctions are fabricated by employing sequential double-step chemical bath deposition (CBD) and radio -frequency (RF) sputtering techniques on Si substrate. The ultra-thin highly transparent Ga2O3 (~ 15 nm) layer reduces the surface states of Y:ZnO nanowires in a significant amount and such core-shell heterojunction deals with the development of low power white light-responsive detectors by combining Y:ZnO and Ga2O3. The crystallinity, structure, chemical states and light absorption properties of the Y:ZnO–Ga2O3 core-shell nanowires are analysed in detail by using XRD, FESEM, HRTEM, EDS, XPS and UV-Visible spectroscopy. The fabricated core-shell Y:ZnO–Ga2O3 nanowire/Si heterojunction exhibits p–n junction behaviour and it exhibits self-powered photoresponse under Xe lamp with AM 1.5 G (100 W/cm2) filter. A low dark current of ~ 1.74 × 10− 11 A, high photo-to-dark current ratio of 3.2 × 104 and rapid response speed of < 1 s are achieved from such core-shell heterojunction device and relevant photo-carrier generation mechanism is considered from energy band diagram. Therefore, current study provides a technological route to fabricate the next-generation self-powered core-shell heterojunction devices for photo-sensing applications.
- Publication
Journal of Materials Science: Materials in Electronics, 2023, Vol 34, Issue 8, p1
- ISSN
0957-4522
- Publication type
Article
- DOI
10.1007/s10854-023-10148-9