Back to matchesWe found a matchYour institution may have rights to this item. Sign in to continue.Title2DEG characteristics of InAlAs/InP based HEMTs by solving Schrödinger and Poisson equations followed by device characteristics.AuthorsLenka, Trupti Ranjan; Singh, Rajan; Tripathy, Susanta Kumar; Goyal, Vishal; Nguyen, Truong Khang; Nguyen, Hieu Pham TrungPublicationInternational Journal of Numerical Modelling, 2022, Vol 35, Issue 1, p1ISSN0894-3370Publication typeArticleDOI10.1002/jnm.2941