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- Title
Design and analysis of high k silicon nanotube tunnel FET device.
- Authors
Singh, Avtar; Chaudhury, Saurabh; Kumar Pandey, Chandan; Madhulika Sharma, Savitesh; Kumar Sarkar, Chandan
- Abstract
A new tubular field effect transistor (FET) device named silicon nanotube tunnel field effect transistor (Si‐NTTFET) has been proposed which is emerged out of structural engineering and the gate dielectric engineering. The proposed structure offers better immunity towards short channel effects (SCEs) because of the combined effect of minimal doping at the drain side and control of channel region due to the double gate. The tunnelling probability is also improved due to narrow energy band variation. The high k dielectric material such as HfO2 enhances the ON current by a factor of 3 and 14 as compared to Si3N4 and SiO2 gate dielectric, respectively.
- Publication
IET Circuits, Devices & Systems (Wiley-Blackwell), 2019, Vol 13, Issue 8, p1305
- ISSN
1751-858X
- Publication type
Article
- DOI
10.1049/iet-cds.2019.0230