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- Title
CdSe/ZnCdSe Quantum Dot Heterostructures for Yellow Spectral Range Grown on GaAs Substrates by Molecular Beam Epitaxy.
- Authors
Gronin, S. V.; Sorokin, S. V.; Kazanov, D. R.; Sedova, I. V.; Klimko, G. V.; Evropeytsev, E. A.; Ivanov, S. V.
- Abstract
This paper reports on theoretical calculations and fabrication by molecular beam epitaxy of wide-gap IIVI heterostructures emitting in the "true" yellow range (560600 nm) at room temperature. The active region of the structures comprises CdSe quantum dot active layer embedded into a strained Zn1-xCdxSe (x = 0.20.5) quantum well surrounded by a Zn(S,Se)/ZnSe superlattice. Calculations of the CdSe/(Zn,Cd)Se/Zn(S,Se) quantum dot quantum well luminescence wavelength performed using the envelope-function approximation predict rather narrow range of the total Zn1-xCdxSe quantum well thicknesses (d ≈ 2-4 nm) reducing effciently the emission wavelength, while the variation of x (0.20.5) has much stronger effect. The calculations are in a reasonable agreement with the experimental data obtained on a series of test heterostructures. The maximum experimentally achieved emission wavelength at 300 K is as high as 600 nm, while the intense room temperature photoluminescence has been observed up to = 590 nm only. To keep the structure pseudomorphic to GaAs as a whole the tensile-strained surrounding ZnS0.17Se0.83/ZnSe superlattice were introduced to compensate the compressive stress induced by the Zn1-xCdxSe quantum well. The graded-index waveguide laser heterostructure with a CdSe/Zn0.65Cd0.35Se/Zn(S,Se) quantum dotquantum well active region emitting at = 576 nm (T = 300 K) with the 77 to 300 K intensity ratio of 2.5 has been demonstrated.
- Subjects
HETEROSTRUCTURES; SUPERLATTICES; FABRICATION (Manufacturing); MOLECULAR beam epitaxy; EPITAXY
- Publication
Acta Physica Polonica: A, 2014, Vol 126, Issue 5, p1096
- ISSN
0587-4246
- Publication type
Article
- DOI
10.12693/APhysPolA.126.1096