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- Title
GaAsN/GaAs and InGaAsN/GaAs heterostructures grown by molecular beam epitaxy.
- Authors
Egorov, A. Yu.; Zhukov, A. E.; Kovsh, A. R.; Ustinov, V. M.; Mamutin, V. V.; Ivanov, S. V.; Zhmerik, V. N.; Tsatsul’nikov, A. F.; Bedarev, D. A.; Kop’ev, P. S.
- Abstract
Molecular beam epitaxy was used to fabricate GaAsN/GaAs and InGaAsN/GaAs heterostructures, and the influence of the growth regimes on their characteristics was studied. It is shown that implantation of nitrogen causes a substantial long-wavelength shift of the radiation. The possibility of obtaining 1.4 µm radiation at room temperature was demonstrated using In[sub 0.28]Ga[sub 0.72]As[sub 0.97]N[sub 0.03]/GaAs quantum wells.
- Subjects
MOLECULAR beam epitaxy; HETEROSTRUCTURES
- Publication
Technical Physics Letters, 1998, Vol 24, Issue 12, p942
- ISSN
1063-7850
- Publication type
Article
- DOI
10.1134/1.1262326