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- Title
Investigation on Recrystallization Channel for Vertical C-Shaped-Channel Nanosheet FETs by Laser Annealing.
- Authors
Chen, Zhuo; Zhu, Huilong; Wang, Guilei; Wang, Qi; Xiao, Zhongrui; Zhang, Yongkui; Liu, Jinbiao; Lu, Shunshun; Du, Yong; Yu, Jiahan; Xiong, Wenjuan; Kong, Zhenzhen; Du, Anyan; Yan, Zijin; Zheng, Yantong
- Abstract
Transistor scaling has become increasingly difficult in the dynamic random access memory (DRAM). However, vertical devices will be good candidates for 4F2 DRAM cell transistors (F = pitch/2). Most vertical devices are facing some technical challenges. For example, the gate length cannot be precisely controlled, and the gate and the source/drain of the device cannot be aligned. Recrystallization-based vertical C-shaped-channel nanosheet field-effect transistors (RC-VCNFETs) were fabricated. The critical process modules of the RC-VCNFETs were developed as well. The RC-VCNFET with a self-aligned gate structure has excellent device performance, and its subthreshold swing (SS) is 62.91 mV/dec. Drain-induced barrier lowering (DIBL) is 6.16 mV/V.
- Subjects
LASER annealing; RECRYSTALLIZATION (Metallurgy); DYNAMIC random access memory; FIELD-effect transistors
- Publication
Nanomaterials (2079-4991), 2023, Vol 13, Issue 11, p1786
- ISSN
2079-4991
- Publication type
Article
- DOI
10.3390/nano13111786