Back to matchesWe found a matchYour institution may have rights to this item. Sign in to continue.TitleFerroelectric Field Effect Transistors–Based Content‐Addressable Storage‐Class Memory: A Study on the Impact of Device Variation and High‐Temperature Compatibility.AuthorsSunil, Athira; Rana SK, Masud; Lederer, Maximilian; Raffel, Yannick; Müller, Franz; Olivo, Ricardo; Hoffmann, Raik; Seidel, Konrad; Kämpfe, Thomas; Chakrabarti, Bhaswar; De, SouravPublicationAdvanced Intelligent Systems (2640-4567), 2024, Vol 6, Issue 4, p1ISSN2640-4567Publication typeArticleDOI10.1002/aisy.202300461