Found: 24
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Thermal Analysis of THz Schottky Diode Chips with Single and Double-Row Anode Arrangement.
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- Micromachines, 2024, v. 15, n. 8, p. 959, doi. 10.3390/mi15080959
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- Article
Detection of HER-3 with an AlGaN/GaN-Based Ion-Sensitive Heterostructure Field Effect Transistor Biosensor.
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- Micromachines, 2023, v. 14, n. 6, p. 1186, doi. 10.3390/mi14061186
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- Article
Double-Sided Sapphire Optrodes with Conductive Shielding Layers to Reduce Optogenetic Stimulation Artifacts.
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- Micromachines, 2022, v. 13, n. 11, p. 1836, doi. 10.3390/mi13111836
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- Article
120 GHz Frequency-Doubler Module Based on GaN Schottky Barrier Diode.
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- Micromachines, 2022, v. 13, n. 8, p. 1172, doi. 10.3390/mi13081172
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- Article
Influence of the Surface Material and Illumination upon the Performance of a Microelectrode/Electrolyte Interface in Optogenetics.
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- Micromachines, 2021, v. 12, n. 9, p. 1061, doi. 10.3390/mi12091061
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- Article
Performance of GaN-Based LEDs with Nanopatterned Indium Tin Oxide Electrode.
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- Journal of Nanomaterials, 2016, p. 1, doi. 10.1155/2016/8202405
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- Article
AlGaN/GaN Heterostructure Schottky Barrier Diodes with Graded Barrier Layer.
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- Advances in Condensed Matter Physics, 2022, p. 1, doi. 10.1155/2022/5885992
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- Article
Micropyramid Vertical Ultraviolet GaN/AlGaN Multiple Quantum Wells LEDs on Si(111).
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- Advances in Condensed Matter Physics, 2021, p. 1, doi. 10.1155/2021/9990673
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- Article
A 4-Channel Optogenetic Stimulation, 16-Channel Recording Neuromodulation System with Real-Time Micro-LED Detection Function.
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- Electronics (2079-9292), 2023, v. 12, n. 23, p. 4783, doi. 10.3390/electronics12234783
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- Article
A General Approach to Probe Dynamic Operation and Carrier Mobility in Field‐Effect Transistors with Nonuniform Accumulation.
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- Advanced Functional Materials, 2019, v. 29, n. 29, p. N.PAG, doi. 10.1002/adfm.201901700
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- Article
Field effect properties of single-layer MoS<sub>2(1−x)</sub>Se<sub>2x</sub> nanosheets produced by a one-step CVD process.
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- Journal of Materials Science, 2018, v. 53, n. 20, p. 14447, doi. 10.1007/s10853-018-2617-5
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- Article
Asymmetric Structural Engineering of Hot‐Exciton Emitters Achieving a Breakthrough in Non‐Doped BT.2020 Blue OLEDs with a Record 9.5% External Quantum Efficiency.
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- Advanced Science, 2024, v. 11, n. 39, p. 1, doi. 10.1002/advs.202407254
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- Article
Dynamic Characteristics Analysis and Finite Element Simulation of an Ancient Timber Building under Environmental Excitation.
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- Buildings (2075-5309), 2024, v. 14, n. 3, p. 771, doi. 10.3390/buildings14030771
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- Article
Influence of interface contamination on transport properties of two-dimensional electron gas in selective area growth AlGaN/GaN heterostructure.
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- Journal of Materials Science: Materials in Electronics, 2016, v. 27, n. 9, p. 9061, doi. 10.1007/s10854-016-4939-x
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- Article
Low-leakage current and high-breakdown voltage GaN-on-Si (111) System with an AlGaN impurity blocking layer.
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- Journal of Materials Science: Materials in Electronics, 2016, v. 27, n. 5, p. 5158, doi. 10.1007/s10854-016-4408-6
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- Article
The suppression of background doping in selective area growth technique for high performance normally-off AlGaN/GaN MOSFET.
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- Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 12, p. 9753, doi. 10.1007/s10854-015-3645-4
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- Article
Study of 14.9 MeV Neutron Irradiation Effects on Ni/GaN Schottky Contacts Using Low‐Frequency Noise Spectroscopy.
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- Physica Status Solidi. A: Applications & Materials Science, 2020, v. 217, n. 7, p. 1, doi. 10.1002/pssa.201900701
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- Article
The influence of Al composition in AlGaN back barrier layer on leakage current and dynamic R<sub>ON</sub> characteristics of AlGaN/GaN HEMTs.
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- Physica Status Solidi. A: Applications & Materials Science, 2017, v. 214, n. 8, p. n/a, doi. 10.1002/pssa.201600824
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- Article
Investigation of O<sub>3</sub>-Al<sub>2</sub>O<sub>3</sub>/H<sub>2</sub>O-Al<sub>2</sub>O<sub>3</sub> dielectric bilayer deposited by atomic-layer deposition for GaN MOS capacitors.
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- Physica Status Solidi. A: Applications & Materials Science, 2016, v. 213, n. 10, p. 2693, doi. 10.1002/pssa.201532785
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- Article
Three‐Dimensional Covalent‐Organic Frameworks Loaded with Highly Dispersed Ultrafine Palladium Nanoparticles as Efficient Heterogeneous Catalyst.
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- ChemNanoMat, 2021, v. 7, n. 1, p. 95, doi. 10.1002/cnma.202000591
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- Article
Parallel architecture to accelerate superparamagnetic clustering algorithm.
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- Electronics Letters (Wiley-Blackwell), 2020, v. 56, n. 14, p. 701, doi. 10.1049/el.2020.0760
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- Article
A ceRNA network mediated by LINC00475 in papillary thyroid carcinoma.
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- Open Medicine, 2022, v. 17, n. 1, p. 22, doi. 10.1515/med-2021-0389
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- Article
Quantized Microcavity Polariton Lasing Based on InGaN Localized Excitons.
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- Nanomaterials (2079-4991), 2024, v. 14, n. 14, p. 1197, doi. 10.3390/nano14141197
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- Article
Superfluorescence of Sub-Band States in C-Plane In 0.1 Ga 0.9 N/GaN Multiple-QWs.
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- Nanomaterials (2079-4991), 2022, v. 12, n. 3, p. 327, doi. 10.3390/nano12030327
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- Article