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Heterosynaptic Plasticity Achieved by Highly Anisotropic Ionic Migration in Layered Li<sub>x</sub>MoO<sub>3</sub> for Neuromorphic Application (Adv. Electron. Mater. 11/2022)
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- Advanced Electronic Materials, 2022, v. 8, n. 11, p. 1, doi. 10.1002/aelm.202200721
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Oxygen‐Scavenging Effects of Added Ti Layer in the TiN Gate of Metal‐Ferroelectric‐Insulator‐Semiconductor Capacitor with Al‐Doped HfO<sub>2</sub> Ferroelectric Film (Adv. Electron. Mater. 11/2022)
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- Advanced Electronic Materials, 2022, v. 8, n. 11, p. 1, doi. 10.1002/aelm.202200310
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Nonvolatile Logic‐in‐Memory Computing based on Solution‐Processed CuI Memristor (Adv. Electron. Mater. 11/2022).
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- Advanced Electronic Materials, 2022, v. 8, n. 11, p. 1, doi. 10.1002/aelm.202270060
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Heterosynaptic Plasticity Achieved by Highly Anisotropic Ionic Migration in Layered Li<sub>x</sub>MoO<sub>3</sub> for Neuromorphic Application (Adv. Electron. Mater. 11/2022).
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- Advanced Electronic Materials, 2022, v. 8, n. 11, p. 1, doi. 10.1002/aelm.202200721
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Development of Air‐Stable Photomultiplication‐Type Organic Photodetector and Analysis of Active Layer using Removable Top Electrode (Adv. Electron. Mater. 11/2022).
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- Advanced Electronic Materials, 2022, v. 8, n. 11, p. 1, doi. 10.1002/aelm.202270058
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Masthead: (Adv. Electron. Mater. 11/2022).
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- Advanced Electronic Materials, 2022, v. 8, n. 11, p. 1, doi. 10.1002/aelm.202270057
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- Article
Realizing High Thermoelectric Performance of Ag/Al Co‐Doped Polycrystalline SnSe through Band Structure Modification and Hydrogen Reduction (Adv. Electron. Mater. 11/2022).
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- Advanced Electronic Materials, 2022, v. 8, n. 11, p. 1, doi. 10.1002/aelm.202270055
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- Article
Oxygen‐Scavenging Effects of Added Ti Layer in the TiN Gate of Metal‐Ferroelectric‐Insulator‐Semiconductor Capacitor with Al‐Doped HfO<sub>2</sub> Ferroelectric Film (Adv. Electron. Mater. 11/2022).
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- Advanced Electronic Materials, 2022, v. 8, n. 11, p. 1, doi. 10.1002/aelm.202200310
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- Article
Highly Thermally Resilient Dual‐Mode (Digital/Analog) Amorphous Yttrium Fluoride Memristors Exhibiting Excellent Symmetric Linearity.
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- Advanced Electronic Materials, 2022, v. 8, n. 11, p. 1, doi. 10.1002/aelm.202200922
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- Article
Heterosynaptic Plasticity Achieved by Highly Anisotropic Ionic Migration in Layered Li<sub>x</sub>MoO<sub>3</sub> for Neuromorphic Application.
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- Advanced Electronic Materials, 2022, v. 8, n. 11, p. 1, doi. 10.1002/aelm.202200721
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- Article
Mechanism Analysis and Highly Scaled Aluminum Nitride‐Based Self‐Rectifying Memristors.
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- Advanced Electronic Materials, 2022, v. 8, n. 11, p. 1, doi. 10.1002/aelm.202200702
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- Article
Highly Stretchable, Breathable, and Self‐Powered Strain‐Temperature Dual‐Functional Sensors with Laminated Structure for Health Monitoring, Hyperthermia, and Physiotherapy Applications.
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- Advanced Electronic Materials, 2022, v. 8, n. 11, p. 1, doi. 10.1002/aelm.202200680
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Quantifying the Effects of Inhomogeneity and Doping on the Electronic Contribution to Thermal Conductivity in Semiconducting Polymers.
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- Advanced Electronic Materials, 2022, v. 8, n. 11, p. 1, doi. 10.1002/aelm.202200846
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Fabrication of Electronics by Electrohydrodynamic Jet Printing.
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- Advanced Electronic Materials, 2022, v. 8, n. 11, p. 1, doi. 10.1002/aelm.202200728
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- Article
Dynamic Control of Piezoelectricity Enhancement via Modulation of the Bulk Photovoltaic Effect in a BiFeO<sub>3</sub> Thin Film.
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- Advanced Electronic Materials, 2022, v. 8, n. 11, p. 1, doi. 10.1002/aelm.202200785
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- Article
Combined Tactics for Elevating the Thermoelectric Performance of CaMg<sub>2</sub>Sb<sub>2</sub>‐Based p‐type Materials.
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- Advanced Electronic Materials, 2022, v. 8, n. 11, p. 1, doi. 10.1002/aelm.202200742
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Investigation of Optimum Deposition Conditions of Radio Frequency Reactive Magnetron Sputtering of Al<sub>0.7</sub>Sc<sub>0.3</sub>N Film with Thickness down to 20 nm.
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- Advanced Electronic Materials, 2022, v. 8, n. 11, p. 1, doi. 10.1002/aelm.202200726
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Antimony‐Doped p‐Type In<sub>2</sub>Se<sub>3</sub> for Heterophase Homojunction with High‐Performance Reconfigurable Broadband Photovoltaic Effect.
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- Advanced Electronic Materials, 2022, v. 8, n. 11, p. 1, doi. 10.1002/aelm.202200665
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Quantum Linear Magnetoresistance and Nontrivial Berry Phase in High‐Mobility Elemental Tellurium.
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- Advanced Electronic Materials, 2022, v. 8, n. 11, p. 1, doi. 10.1002/aelm.202200653
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- Article
Development of Air‐Stable Photomultiplication‐Type Organic Photodetector and Analysis of Active Layer using Removable Top Electrode.
- Published in:
- Advanced Electronic Materials, 2022, v. 8, n. 11, p. 1, doi. 10.1002/aelm.202200651
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- Publication type:
- Article
Flexible Active Crossbar Arrays Using Amorphous Oxide Semiconductor Technology toward Artificial Neural Networks Hardware.
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- Advanced Electronic Materials, 2022, v. 8, n. 11, p. 1, doi. 10.1002/aelm.202200642
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- Article
Negative Capacitance Phenomenon and Origin in Alkali Niobate Film with Self‐Assembled Lattice Faults.
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- Advanced Electronic Materials, 2022, v. 8, n. 11, p. 1, doi. 10.1002/aelm.202200633
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Resistive Switching of Self‐Assembled Silver Nanowire Networks Governed by Environmental Conditions.
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- Advanced Electronic Materials, 2022, v. 8, n. 11, p. 1, doi. 10.1002/aelm.202200631
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- Article
Polarization Rotation Control Domain Dynamic Response Modulates Piezoelectric Properties of Lead‐Free Thin Films.
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- Advanced Electronic Materials, 2022, v. 8, n. 11, p. 1, doi. 10.1002/aelm.202200611
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Property Regulation Principle in Mn‐Doped BF–BT Ceramics: Competitive Control of Domain Switching By Defect Dipoles and Domain Configuration.
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- Advanced Electronic Materials, 2022, v. 8, n. 11, p. 1, doi. 10.1002/aelm.202200609
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- Article
Energy Harvest in Ferromagnet‐Embedded Surface Acoustic Wave Devices.
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- Advanced Electronic Materials, 2022, v. 8, n. 11, p. 1, doi. 10.1002/aelm.202200593
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- Article
Efficient Room‐Temperature Voltage Control of Picosecond Optical Spin Orientation Using a III‐V Semiconductor Nanostructure.
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- Advanced Electronic Materials, 2022, v. 8, n. 11, p. 1, doi. 10.1002/aelm.202200588
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- Article
Sensitive Detection of Alcohol Isomers by Ionically Conductive Metal‐Organic Frameworks.
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- Advanced Electronic Materials, 2022, v. 8, n. 11, p. 1, doi. 10.1002/aelm.202200542
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- Article
Demonstration of PdSe<sub>2</sub> CMOS Using Same Metal Contact in PdSe<sub>2</sub> n‐/p‐MOSFETs through Thickness‐Dependent Phase Transition.
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- Advanced Electronic Materials, 2022, v. 8, n. 11, p. 1, doi. 10.1002/aelm.202200485
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Influence of Tetraphenylbenzene on the OFET Behavior of Triarylamines.
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- Advanced Electronic Materials, 2022, v. 8, n. 11, p. 1, doi. 10.1002/aelm.202200484
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Strategies to Control the Relaxation Kinetics of Ag‐Based Diffusive Memristors and Implications for Device Operation.
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- Advanced Electronic Materials, 2022, v. 8, n. 11, p. 1, doi. 10.1002/aelm.202200549
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Ambient‐Stable Near‐Infrared Organic Photodetectors with Ultrahigh Detectivity and Ultrafast Response for Biometric Monitoring.
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- Advanced Electronic Materials, 2022, v. 8, n. 11, p. 1, doi. 10.1002/aelm.202200585
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- Article
Realizing High Thermoelectric Performance of Ag/Al Co‐Doped Polycrystalline SnSe through Band Structure Modification and Hydrogen Reduction.
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- Advanced Electronic Materials, 2022, v. 8, n. 11, p. 1, doi. 10.1002/aelm.202200577
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- Article
Gate‐Tunable Photovoltaic Behavior and Polarized Image Sensor Based on All‐2D TaIrTe<sub>4</sub>/MoS<sub>2</sub> Van Der Waals Schottky Diode.
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- Advanced Electronic Materials, 2022, v. 8, n. 11, p. 1, doi. 10.1002/aelm.202200551
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- Article
Ambipolar Organic Field‐Effect Transistors and Complementary Circuits Based on Single Crystals with Alcohol Treatment.
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- Advanced Electronic Materials, 2022, v. 8, n. 11, p. 1, doi. 10.1002/aelm.202200557
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- Article
Thermal Enhanced Resistive Switching Performance of <100>‐oriented Perovskite [(TZ‐H)<sub>2</sub>(PbBr<sub>4</sub>)]<sub>n</sub> with High Working Temperature: a Triazolium/(PbBr<sub>4</sub>)<sub>n</sub><sup>2</sup><sup>n</sup><sup>–</sup> Interfacial Interaction Insight
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- Advanced Electronic Materials, 2022, v. 8, n. 11, p. 1, doi. 10.1002/aelm.202200537
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Large Exchange Bias, High Dielectric Constant, and Outstanding Ionic Conductivity in a Single‐Phase Spin Glass.
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- Advanced Electronic Materials, 2022, v. 8, n. 11, p. 1, doi. 10.1002/aelm.202200483
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- Article
Unraveling the Atomic Redox Process in Quantum Conductance and Synaptic Events for Neuromorphic Computing.
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- Advanced Electronic Materials, 2022, v. 8, n. 11, p. 1, doi. 10.1002/aelm.202200509
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Achieving Excellent Energy Storage Properties in Fine‐Grain High‐Entropy Relaxor Ferroelectric Ceramics.
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- Advanced Electronic Materials, 2022, v. 8, n. 11, p. 1, doi. 10.1002/aelm.202200503
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Inkjet‐Printed, Deep Subthreshold Operated Pseudo‐CMOS Inverters with High Voltage Gain and Low Power Consumption.
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- Advanced Electronic Materials, 2022, v. 8, n. 11, p. 1, doi. 10.1002/aelm.202200528
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- Article
Implementing Complex Oxides for Efficient Room‐Temperature Spin–Orbit Torque Switching.
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- Advanced Electronic Materials, 2022, v. 8, n. 11, p. 1, doi. 10.1002/aelm.202200514
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- Article
Transport Spectroscopy of Ultraclean Tunable Band Gaps in Bilayer Graphene.
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- Advanced Electronic Materials, 2022, v. 8, n. 11, p. 1, doi. 10.1002/aelm.202200510
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- Article
Hydrogel‐Based Real‐Time Wireless Liquid Level Monitoring System for Size‐Independent Infusion Bags.
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- Advanced Electronic Materials, 2022, v. 8, n. 11, p. 1, doi. 10.1002/aelm.202200473
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- Article
π‐Extended Zigzag‐Shaped Diphenanthrene‐Based p‐Type Semiconductors Exhibiting Small Effective Masses.
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- Advanced Electronic Materials, 2022, v. 8, n. 11, p. 1, doi. 10.1002/aelm.202200452
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- Article
2D Magnetic Heterostructures and Emergent Spintronic Devices.
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- Advanced Electronic Materials, 2022, v. 8, n. 11, p. 1, doi. 10.1002/aelm.202200164
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Ferromagnetic Order in Semiconducting Cr‐Doped α‐MnTe Nanosheets Grown by Chemical Vapor Deposition.
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- Advanced Electronic Materials, 2022, v. 8, n. 11, p. 1, doi. 10.1002/aelm.202200451
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Forming‐Free, Self‐Compliance, Bipolar Multi‐Level Resistive Switching in WO<sub>3–x</sub> Based MIM Device.
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- Advanced Electronic Materials, 2022, v. 8, n. 11, p. 1, doi. 10.1002/aelm.202200250
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A Comprehensive Categorization of Micro/Nanomechanical Resonators and Their Practical Applications from an Engineering Perspective: A Review.
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- Advanced Electronic Materials, 2022, v. 8, n. 11, p. 1, doi. 10.1002/aelm.202200229
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The Effect of Deposition Conditions on Heterointerface‐Driven Band Alignment and Resistive Switching Properties.
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- Advanced Electronic Materials, 2022, v. 8, n. 11, p. 1, doi. 10.1002/aelm.202200220
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- Article
Ferroelasticity Mediated Energy Conversion in Strained Perovskite Films.
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- Advanced Electronic Materials, 2022, v. 8, n. 11, p. 1, doi. 10.1002/aelm.202200415
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- Article