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- Title
Interference effects in the electroreflectance and electroluminescence spectra of InGaN/AlGaN/GaN light-emitting-diode heterostructures.
- Authors
Avakyants, L. P.; Bokov, P. Yu.; Chervyakov, A. V.; Chuyas, A. V.; Yunovich, A. E.; Vasileva, E. D.; Bauman, D. A.; Uelin, V. V.; Yavich, B. S.
- Abstract
Interference effects in InGaN/AlGaN/GaN light-emitting-diode heterostructures of blue emission are studied by spectroscopy of electroreflectance and electroluminescence. The periodic bands observed in the electroreflectance and electroluminescence spectra in a blue spectral range are caused by interference effects in the structure in general. The emergence of interference fringes in the electroreflection spectra is explained by modulation of built-in electric fields in the active region of the heterostructure. The long-period interference fringes observed in the electroreflectance spectra in a wide spectral range from infrared to ultra-violet allows one to determine the location of the active region of the heterostructure with respect to different reflecting surfaces in the cavity.
- Subjects
ELECTROMAGNETIC fields; SEMICONDUCTORS; SPECTRUM analysis; ELECTROLUMINESCENCE; LUMINESCENCE
- Publication
Semiconductors, 2010, Vol 44, Issue 8, p1090
- ISSN
1063-7826
- Publication type
Article
- DOI
10.1134/S1063782610080245