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- Title
Room Temperature λ = 1.3 μm Photoluminescence from InGaAs Quantum Dots on (001) Si Substrate.
- Authors
Burbaev, T. M.; Kazakov, I. P.; Kurbatov, V. A.; Rzaev, M. M.; Tsvetkov, V. A.; Tsekhosh, V. I.
- Abstract
GaAs/In[sub x]Ga[sub 1-x]As quantum dot heterostructures exhibiting high-intensity λ = 1.3 µm photoluminescence at room temperature have been grown on (001) Si substrate with a Si[sub 1-x]Ge[sub x] buffer layer. The growth was done successively on two MBE machines with sample transfer via the atmosphere. The results obtained by the study of the structure growth process by means of high-energy electron diffraction are presented.
- Subjects
QUANTUM dots; HETEROSTRUCTURES
- Publication
Semiconductors, 2002, Vol 36, Issue 5, p535
- ISSN
1063-7826
- Publication type
Article
- DOI
10.1134/1.1478544