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- Title
Stacked InAs/InGaAs Quantum Dot Heterostructures for Optical Sources Emitting in the 1.3μm Wavelength Range.
- Authors
Maleev, N. A.; Zhukov, A. E.; Kovsh, A. R.; Mikhrin, S. S.; Ustinov, V. M.; Bedarev, D. A.; Volovik, B. V.; Krestnikov, I. L.; Kayander, I. N.; Odnoblyudov, V. A.; Suvorova, A. A.; Tsatsul’nikov, A. F.; Shernyakov, Yu. M.; Ledentsov, N. N.; Kop’ev, P. S.; Alferov, Zh. I.; Bimberg, D.
- Abstract
A method is proposed for growing stacked InAs/InGaAs self-organized quantum dots on GaAs substrates. The technique allows fabrication of structures exhibiting intense and narrow-line photoluminescence in the 1.3 µm wavelength region. The influence of growth conditions on structural and optical characteristics was studied. The proposed structures show promise in developing vertical-cavity surface-emitting devices.
- Subjects
GALLIUM arsenide semiconductors; QUANTUM dots; HETEROSTRUCTURES
- Publication
Semiconductors, 2000, Vol 34, Issue 5, p594
- ISSN
1063-7826
- Publication type
Article
- DOI
10.1134/1.1188034