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- Title
Oxygen ion-beam modification of vanadium oxide films for reaching a high value of the resistance temperature coefficient.
- Authors
Sabov, T. M.; Oberemok, O. S.; Dubikovskyi, O. V.; Melnik, V. P.; Kladko, V. P.; Romanyuk, B. M.; Popov, V. G.; Gudymenko, O. Yo.; Safriuk, N. V.
- Abstract
A new method to prepare vanadium oxide with a high temperature coefficient of resistance (TCR) and low resistance for uncooled micro-bolometers has been proposed. Amorphous vanadium oxide films with V2O3 phase inclusions have been fabricated on silicon and silica substrates at the temperature 200 °C by using the direct current reactive magnetron sputtering method in controlled Ar/O2 atmosphere. Additional oxygen ion implantation in the deposited films allows to synthesize vanadium oxide with crystalline inclusions of VO2 and V2O5 phases under the low temperature annealing. The following long low-temperature annealing provides formation of VOx (at x → 2) film with the TCR close to 7.0%/°C.
- Subjects
TEMPERATURE coefficient of electric resistance; ION beams; VANADIUM oxide; BOLOMETERS; MAGNETRON sputtering; PHYSIOLOGICAL transport of oxygen
- Publication
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017, Vol 20, Issue 2, p153
- ISSN
1560-8034
- Publication type
Article
- DOI
10.15407/spqeo20.02.153