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- Title
Formation of ohmic contacts to n(p)-gan and measurement of their contact resistivity.
- Authors
Boltovets, M. S.; Ivanov, V. M.; Konakova, R. V.; Kudryk, Ya. Ya.; Milenin, V. V.; Shynkarenko, V. V.; Sheremet, V. M.; Sveshnikov, Yu. N.; Yavich, B. S.
- Abstract
We propose multilayer ohmic contacts to n- and p-GaN layers, with titanium boride as diffusion barrier. It is shown that the optimal method of contact resistivity measurement is the transmission line method (TLM) with circular contact geometry. The Ti-Al-TiBx-Au contact metallization to n-GaN retains its layer structure after thermal annealing at temperatures up to 900 °C. The contact resistivity ρc is (6.69±1.67)x10-5 Ωcm². For the Au-TiBx-Ni-p-GaN contact structure, the contact resistivity is (1±0.15)x10-3 Ω⋅cm².
- Subjects
OHMIC contacts; ELECTRIC contacts; MEASUREMENT; ELECTRIC lines; RAPID thermal processing; GALLIUM nitride; STRUCTURAL optimization
- Publication
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2010, Vol 13, Issue 4, p337
- ISSN
1560-8034
- Publication type
Article
- DOI
10.15407/spqeo13.04.337