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- Title
Versatile p-Type Chemical Doping to Achieve Ideal Flexible Graphene Electrodes.
- Authors
Han, Tae ‐ Hee; Kwon, Sung ‐ Joo; Li, Nannan; Seo, Hong ‐ Kyu; Xu, Wentao; Kim, Kwang S.; Lee, Tae ‐ Woo
- Abstract
We report effective solution-processed chemical p-type doping of graphene using trifluoromethanesulfonic acid (CF3SO3H, TFMS), that can provide essential requirements to approach an ideal flexible graphene anode for practical applications: i) high optical transmittance, ii) low sheet resistance (70 % decrease), iii) high work function (0.83 eV increase), iv) smooth surface, and iv) air-stability at the same time. The TFMS-doped graphene formed nearly ohmic contact with a conventional organic hole transporting layer, and a green phosphorescent organic light-emitting diode with the TFMS-doped graphene anode showed lower operating voltage, and higher device efficiencies (104.1 cd A−1, 80.7 lm W−1) than those with conventional ITO (84.8 cd A−1, 73.8 lm W−1).
- Subjects
DOPING agents (Chemistry); TRACE elements; GRAPHENE; ANODES; OHMIC contacts
- Publication
Angewandte Chemie, 2016, Vol 128, Issue 21, p6305
- ISSN
0044-8249
- Publication type
Article
- DOI
10.1002/ange.201600414