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Pulsed heating of active elements of low-threshold electron-beam-pumped green lasers based on nanostructures of II–VI compounds.
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- Optics & Spectroscopy, 2009, v. 107, n. 3, p. 383, doi. 10.1134/S0030400X09090124
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- Article
Spin-Dependent Electronic Dynamics in a Hybrid Nonresonance III-V/II-VI Heterostructure.
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- Journal of Experimental & Theoretical Physics, 2018, v. 126, n. 2, p. 210, doi. 10.1134/S1063776118020012
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- Article
Green lasers based on CdSe/ZnSe nanostructures pumped by electron beams with energies below 10 keV.
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- Technical Physics Letters, 2007, v. 33, n. 12, p. 1032, doi. 10.1134/S1063785007120140
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Midinfrared Injection-Pumped Laser Based on a III–V/II–VI Hybrid Heterostructure with Submonolayer InSb Insets.
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- Technical Physics Letters, 2005, v. 31, n. 3, p. 235, doi. 10.1134/1.1894443
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- Article
Luminescence in p–i–n Structures with Compensated Quantum Wells.
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- Semiconductors, 2024, v. 58, n. 5, p. 375, doi. 10.1134/S1063782624050014
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- Article
Photoconductivity and Infrared-Light Absorption in p-GaAs/AlGaAs Quantum Wells.
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- Semiconductors, 2021, v. 55, n. 9, p. 710, doi. 10.1134/S1063782621080212
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- Article
Sulfide Passivation of InP(100) Surface.
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- Semiconductors, 2020, v. 54, n. 14, p. 1843, doi. 10.1134/S106378262014016X
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Investigation of Built-in Electric Fields at the GaSe/GaAs Interface by Photoreflectance Spectroscopy.
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- Semiconductors, 2020, v. 54, n. 10, p. 1198, doi. 10.1134/S1063782620100176
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- Article
Molecular-Beam Epitaxy of Two-Dimensional GaSe Layers on GaAs(001) and GaAs(112) Substrates: Structural and Optical Properties.
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- Semiconductors, 2019, v. 53, n. 8, p. 1131, doi. 10.1134/S1063782619080189
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Development of the Physicochemical Properties of the GaSb(100) Surface in Ammonium Sulfide Solutions.
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- Semiconductors, 2019, v. 53, n. 7, p. 892, doi. 10.1134/S1063782619070169
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- Article
Spin injection in GaAs/GaSb quantum-well heterostructures.
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- Semiconductors, 2010, v. 44, n. 2, p. 194, doi. 10.1134/S1063782610020107
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- Article
Highly Efficient Semiconductor Emitter of Single Photons in the Red Spectral Range.
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- JETP Letters, 2019, v. 109, n. 3, p. 145, doi. 10.1134/S0021364019030135
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- Article
Single-Photon Emitter at 80 K Based on a Dielectric Nanoantenna with a CdSe/ZnSe Quantum Dot.
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- JETP Letters, 2018, v. 108, n. 3, p. 201, doi. 10.1134/S0021364018150109
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- Article
Evidence for Mn<sup>2+</sup> fine structure in CdMnSe/ZnSe quantum dots caused by their low dimensionality.
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- JETP Letters, 2009, v. 88, n. 9, p. 631, doi. 10.1134/S0021364008210182
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- Article
Micro-Photoluminescence Studies of CdSe/ZnSe Quantum Dot Structures Grown under Different Conditions.
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- Acta Physica Polonica: A, 2016, v. 129, n. 1A, p. A-117, doi. 10.12693/APhysPolA.129.A-117
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- Article
Optical and Structural Properties of GaAs/AlGaAs Quantum Wells Grown by MBE in the Vicinity of As-Rich-GaAs/ZnSe Heterovalent Interface.
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- Acta Physica Polonica: A, 2014, v. 126, n. 5, p. 1184, doi. 10.12693/APhysPolA.126.1184
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- Article
Structural and Optical Properties of Alternately-Strained ZnSxSe<sub>1-x</sub>/CdSe Superlattices with Effective Band-Gap 2.52.6 eV.
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- Acta Physica Polonica: A, 2014, v. 126, n. 5, p. 1156, doi. 10.12693/APhysPolA.126.1156
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- Article
CdSe/ZnCdSe Quantum Dot Heterostructures for Yellow Spectral Range Grown on GaAs Substrates by Molecular Beam Epitaxy.
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- Acta Physica Polonica: A, 2014, v. 126, n. 5, p. 1096, doi. 10.12693/APhysPolA.126.1096
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- Article
An efficient electron-beam-pumped semiconductor laser for the green spectral range based on II–VI multilayer nanostructures.
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- Semiconductors, 2008, v. 42, n. 12, p. 1440, doi. 10.1134/S1063782608120129
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- Article
CdSe/ZnSe quantum dot structures grown by molecular beam epitaxy with a CdTe submonolayer stressor.
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- Semiconductors, 2007, v. 41, n. 11, p. 1345, doi. 10.1134/S1063782607110139
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- Article
The Exciton Photoluminescence and Vertical Transport of Photoinduced Carriers in CdSe/CdMgSe Superlattices.
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- Semiconductors, 2005, v. 39, n. 4, p. 432, doi. 10.1134/1.1900258
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- Article
Lasing in Cd(Zn)Se/ZnMgSSe Heterostructures Pumped by Nitrogen and InGaN/GaN Lasers.
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- Semiconductors, 2004, v. 38, n. 9, p. 1099, doi. 10.1134/1.1797493
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- Article
Mid-Infrared (λ = 2.775μm) Injection Laser Based on AlGaAsSb/InAs/CdMgSe Hybrid Double Heterostructure Grown by Molecular-Beam Epitaxy.
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- Semiconductors, 2003, v. 37, n. 6, p. 736, doi. 10.1134/1.1582546
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- Article
Sulfide Passivating Coatings on GaAs(100) Surface under Conditions of MBE Growth of <II–VI>/GaAs.
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- Semiconductors, 2002, v. 36, n. 1, p. 54, doi. 10.1134/1.1434514
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Structural, Luminescent, and Transport Properties of Hybrid AlAsSb/InAs/Cd(Mg)Se Heterostructures Grown by Molecular Beam Epitaxy.
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- Semiconductors, 2001, v. 35, n. 4, p. 419
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- Article
Blue-green ZnSe lasers with a new type of active region.
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- Semiconductors, 1999, v. 33, n. 9, p. 1016, doi. 10.1134/1.1187829
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- Article
Molecular beam epitaxy of alternating-strain ZnSe-based multilayer heterostructures for blue-green lasers.
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- Semiconductors, 1998, v. 32, n. 10, p. 1137, doi. 10.1134/1.1187546
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- Article
Spectral selection of excitonic transitions in a dense array of CdSe/ZnSe quantum dots.
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- Physica Status Solidi (B), 2016, v. 253, n. 8, p. 1485, doi. 10.1002/pssb.201600095
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- Article
Four-junction heterovalent solar cells based on II-VI/III-V/Ge coherent and metamorphic heterostructures.
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- Physica Status Solidi (B), 2016, v. 253, n. 8, p. 1503, doi. 10.1002/pssb.201600064
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- Article
Excitonic states and energy relaxation in low-dimension CdSe/ZnSe structures with isolated ZnCdSe islands.
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- Physica Status Solidi (B), 2015, v. 252, n. 8, p. 1717, doi. 10.1002/pssb.201451728
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- Article
Green electron-beam pumped laser arrays based on II-VI nanostructures.
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- Physica Status Solidi (B), 2010, v. 247, n. 6, p. 1561, doi. 10.1002/pssb.200983274
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- Article
III-V/II-VI heterovalent double quantum wells.
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- Physica Status Solidi (B), 2006, v. 243, n. 4, p. 819, doi. 10.1002/pssb.200564763
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- Article
Structural and Optical Properties of GaSe/GaAs(001) Layers Grown by Molecular Beam Epitaxy.
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- Acta Physica Polonica: A, 2019, v. 136, n. 4, p. 608, doi. 10.12693/APhysPolA.136.608
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Contactless Measurement of Electron Concentration in Undoped Homoepitaxial InSb Layers.
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- Journal of Communications Technology & Electronics, 2018, v. 63, n. 3, p. 289, doi. 10.1134/S1064226918030105
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- Article
Molecular Beam Epitaxy of Mixed h-GaTe/m-GaTe Thin Films on GaAs(001) Substrates: Structural and Photoluminescence Properties.
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- Journal of Experimental & Theoretical Physics, 2022, v. 135, n. 6, p. 853, doi. 10.1134/S1063776122120093
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- Article
Nanoheterostructures with CdTe/ZnMgSeTe Quantum Dots for Single-Photon Emitters Grown by Molecular Beam Epitaxy.
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- Technical Physics Letters, 2018, v. 44, n. 3, p. 267, doi. 10.1134/S1063785018030264
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- Article