We found a match
Your institution may have rights to this item. Sign in to continue.
- Title
Tailoring low-dimensional structures of bismuth on monolayer epitaxial graphene.
- Authors
Chen, H.-H.; Su, S. H.; Chang, S.-L.; Cheng, B.-Y.; Chen, S. W.; Chen, H.-Y.; Lin, M.-F.; Huang, J. C. A.
- Abstract
To improve graphene-based multifunctional devices at nanoscale, a stepwise and controllable fabrication procedure must be elucidated. Here, a series of structural transition of bismuth (Bi) adatoms, adsorbed on monolayer epitaxial graphene (MEG), is explored at room temperature. Bi adatoms undergo a structural transition from one-dimensional (1D) linear structures to two-dimensional (2D) triangular islands and such 2D growth mode is affected by the corrugated substrate. Upon Bi deposition, a little charge transfer occurs and a characteristic peak can be observed in the tunneling spectrum, reflecting the distinctive electronic structure of the Bi adatoms. When annealed to ~500 K, 2D triangular Bi islands aggregate into Bi nanoclusters (NCs) of uniform size. A well-controlled fabrication method is thus demonstrated. The approaches adopted herein provide perspectives for fabricating and characterizing periodic networks on MEG and related systems, which are useful in realizing graphene-based electronic, energy, sensor and spintronic devices.
- Subjects
BISMUTH; GRAPHENE; ADATOMS; SPINTRONICS; LOW-dimensional semiconductors
- Publication
Scientific Reports, 2015, p11623
- ISSN
2045-2322
- Publication type
Article
- DOI
10.1038/srep11623