We found a match
Your institution may have rights to this item. Sign in to continue.
- Title
Investigation of Dielectric Resonator Oscillator Using High-Electron Mobility Transistor at 26GHz for Space Applications.
- Authors
Ranjan, Pinku; Khandare, Swati
- Abstract
An oscillator is a vital component as the energy source in microwave telecommunication system. Microwave oscillators designed using Gunn diode have poor DC to RF efficiency. IMPact Ionization Avalanche Transit-Time diode (IMPATT) oscillators have the drawback of poor noise performance. The transistorized oscillators have a limitation to the maximum oscillation frequency which means that they cannot be used for oscillators designed for high frequencies. To design negative series feedback Dielectric Resonator Oscillator (DRO), the resonant unit uses a dielectric resonator (DR) since it is small in size, light in weight, has high-Quality (Q) factor, better stability and also it is inexpensive. It has the benefits of low-phase noise, low cost, miniaturization, high stability, applicable for devices designed at high frequencies and had already been widely applied, so the research on microwave dielectric oscillator has also been one of the focus of today's microwave integrated circuits. DRO is widely used in electronic warfare, missile, radar and communication systems. The DRO incorporates High-Electron Mobility Transistor (HEMT) as an active device since it offers higher power-added efficiency combined with excellent low-noise figures and performance. The entire circuit of DRO using HEMT at 26 GHz is designed using Agilent Advanced Design System (ADS) software. In this, DRO different measurements of parameters are done such as output power which is typically + 1 1 dBm for 26 GHz DRO, phase noise at 10 kHz offset for 26 GHz DRO it is 80 dBc/Hz. The frequency pushing and frequency pulling for 26 GHz DRO its typical values are 30 kHz/V and 1 MHz, respectively.
- Subjects
DIELECTRIC resonators; MICROWAVE devices; MILITARY electronics; MICROWAVE oscillators; IMPACT ionization; PHASE noise
- Publication
Journal of Circuits, Systems & Computers, 2022, Vol 31, Issue 3, p1
- ISSN
0218-1266
- Publication type
Article
- DOI
10.1142/S0218126622500463