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- Title
Crystallographic Orientation Effect on Electromigration in Ni-Sn Microbump.
- Authors
Huang, Yi-Ting; Chen, Chih-Hao; Chakroborty, Subhendu; Wu, Albert
- Abstract
This article addresses the reliability challenges regarding electromigration in developing three-dimensional integrated circuits (3D-ICs). The line-type sandwich structure of Ni/Sn3.5Ag(15 μm)/Ni was used to simulate microbumps to examine the reliability of electromigration in 3D-IC technology. The solder strip of Ni/Sn3.5Ag(15 μm)/Ni was stressed with a current density of 1.0 × 10 A/cm at 150°C. The current stressing enhanced the reaction between the solder and Ni to form NiSn, which occupied the entire joint and transformed into a Ni/NiSn/Ni structure when the solder was completely consumed. Electron backscatter diffraction was used to analyze the crystallographic characteristics of Sn and NiSn as related to the electromigration effect. The results indicated that the crystallographic orientation of Sn plays a significant role in the Ni/Sn3.5Ag/Ni, whereas the orientation of NiSn is the dominant factor of diffusion behavior in the Ni/NiSn/Ni.
- Subjects
ELECTRODIFFUSION; INTEGRATED circuits; ELECTRON backscattering; METALLURGY; CRYSTALLOGRAPHY; GRAIN size
- Publication
JOM: The Journal of The Minerals, Metals & Materials Society (TMS), 2017, Vol 69, Issue 9, p1717
- ISSN
1047-4838
- Publication type
Article
- DOI
10.1007/s11837-017-2457-9